Growth of Silicon Films Onto Fluororesin Surface by ArF Excimer Laser

1993 ◽  
Vol 334 ◽  
Author(s):  
T. Miyokawa ◽  
M. Okoshi ◽  
K. Toyoda ◽  
M. Murahara
Keyword(s):  
Surface Roughness ◽  
Surface Modification ◽  
Excimer Laser ◽  
High Density ◽  
Silicon Films ◽  
Chemical Compositions ◽  
Xps Analysis ◽  
Modification Process ◽  
Arf Excimer Laser ◽  
Mixed Gases

AbstractSilicon films were deposited on a fluororesin surface. The process was divided into two steps: surface modification process and silicon CVD onto the modified parts. In the modification process, SiH4 and B(CH3)3 mixed gases were used with ArF excimer laser. Fluorine atoms of the surface were pulled out by boron atoms which were photo—dissociated from B(CH3)3 and were replaced with silicon atoms released from SiH4. In the CVD process, SiH4 gas was used with high—density excited ArF excimer laser. Silicon films were deposited onto the nuclei by photodecomposition of SiH4.Chemical compositions of the modified layers and the deposited parts were inspected by XPS analysis. 1000 Å thickness of the deposited silicon films was confirmed by the surface roughness interference–meter.

Selective Surface Modification of a Fluorocarbon Resin Into Hydrophilic Material Using an Excimer Laser

1990 ◽  
Vol 201 ◽  
Author(s):  
M. Okoshi ◽  
M. Murahara ◽  
K. Toyoda
Keyword(s):  
Surface Modification ◽  
Laser Beam ◽  
Excimer Laser ◽  
Contact Angles ◽  
Xps Analysis ◽  
Sem Image ◽  
Ammonia Complex ◽  
Hydrophilic Material ◽  
Arf Excimer Laser ◽  
Selective Surface Modification

AbstractSelective surface modification of fluorocarbon resin has been demonstrated by using an ArF excimer laser beam and an ammonia complex which was made from NH3 and B2H6 gases. The fluorocarbon resin was set in the atmosphere of NH3 gas. NH3 molecules which were adsorbed on the surface reacted quickly with the B2H6 molecules, and an ammonia complex was produced. As a result, the complex was adsorbed on the surface. The resin surface was selectively irradiated by ArF laser beam. The complex and C-F bonds of this resin were excited by the laser beam, and the surface was selectively modified to be hydrophilic property. The modified samples were evaluated by XPS analysis, measuring the contact angles of the water and the SEM image on the surface.

Photochemical modification of polytetrafluoroethylene into oleophilic property using an ArF excimer laser

1992 ◽  
Vol 7 (7) ◽  
pp. 1912-1916 ◽  
Author(s):  
M. Okoshi ◽  
M. Murahara ◽  
K. Toyoda
Keyword(s):  
Excimer Laser ◽  
Polymer Surface ◽  
Contact Angle Measurement ◽  
Angle Measurement ◽  
Photochemical Reactions ◽  
Xps Analysis ◽  
Spectrum Measurement ◽  
Arf Excimer Laser ◽  
The Stability ◽  
Photochemical Modification

Photochemical modification of the polytetrafluoroethylene (PTFE) with incorporation of the CH3 radical released from the B(CH3)3 molecule excited by an ArF excimer laser has been demonstrated. The incorporation of CH3 radicals and the depletion of fluorine atoms of the polymer surface were studied by XPS analysis and infrared ATR spectrum measurement. In these photochemical reactions, the photoirradiated surface changed into oleophilic. The properties were studied by contact angle measurement. The stability of the oleophilic surface was examined at the elevated temperature of 200 °C for 6 h in O2 or N2 ambient and also by immersing in alkaline or acid water solutions.

Excimer Laser Induced Modification of Teflon Surface into Silicon Carbide-Like

1991 ◽  
Vol 236 ◽  
Author(s):  
M. Okoshi ◽  
K. Toyoda ◽  
M. Murahara
Keyword(s):  
Silicon Carbide ◽  
Excimer Laser ◽  
Photochemical Reaction ◽  
Surface Region ◽  
Mixed Gas ◽  
Near Surface ◽  
Modification Process ◽  
Gas Atmosphere ◽  
Ft Ir ◽  
Arf Excimer Laser

AbstractA silicon carbide-like layer was produced in the near-surface region of teflon by irradiating with an ArF excimer laser in a SiH4 and B(CH3)3 mixed gas atmosphere. The pure photochemical reaction was employed in the modification process, and the defluorination of the surface was performed with boron atoms which were photodissociated from B(CH3)3. The CH3 radicals, also photodissociated, induced the dehydrogenation of SiH4 gas; which followed the production of SiHx radicals. The SiHx radicals and CH3 radicals which could not have induced the dehydrogenation of SiH4 were substituted for fluorine atoms of the surface. As a result, the surface was photomodified into silicon carbide. Chemical composition of the photomodified surface was inspected by the XPS and the ATR-FT-IR spectra measurement, and the bonding of the Si-CH3 radicals which traded off the reduction of the fluorine atoms was comfirmed. The Si/C composition ratio of the photomodified surface was 0.7.

Very-Low Surface Roughness in Laser Crystallized Polycrystalline Silicon

1997 ◽  
Vol 471 ◽  
Author(s):  
K. Mourgues ◽  
L. Pichon ◽  
F. Raoult ◽  
T. Mohammed-Brahim ◽  
D. Briand ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Excimer Laser ◽  
Hydrogen Content ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
High Surface ◽  
Surface Oxidation ◽  
Silicon Films ◽  
Single Shot ◽  
Large Area

ABSTRACTExcimer laser (ECL) crystallization of silicon films on low temperature substrates is one of the most promising technique for large-area polycrystalline silicon films. Crystallization techniques using pulsed-ECL were extensively studied. They are characterized by films with high structural and electrical properties but low uniformity. In this way, the technology using single shot ECL with very large excimer laser (VEL) may be very promising. It was used for the crystallization of amorphous undoped films deposited by PECVD or by LPCVD The LPCVD technique is the most commonly used deposition technique of silicon. It presents numerous advantages and the hydrogen content in the films, known to constitute a drawback in the crystallization process leading to an increased surface roughness, is negligible (∼1 at.%). However, even with these low hydrogen content LPCVD films, high surface roughness is observed after the laser crystallization. Hence surface roughness appears as one of the major problems to be solved in the high performance TFT's realization from laser crystallized films.In this work, the reduction of the surface roughness, determined from Atomic Force Microscopy observations, is presented. This reduction originated from the use of a surface oxidation and an etch treatment to remove the oxide. The mean height of the roughness is then reduced by about 50%.Using these low surface roughness polycrystalline films, TFT's are then realized.

scholarly journals Surface Modification and Dielectric Response Investigation of Cellulose Acetate Membrane Treated by ArF Excimer Laser

OALib ◽  
2014 ◽  
Vol 01 (04) ◽  
pp. 1-10 ◽  
Author(s):  
Ali Pourakbar Saffar ◽  
Babak Jaleh ◽  
Parviz Parvin ◽  
Pikul Wanichapichart ◽  
Mahdi Farshchi-Tabrizi
Keyword(s):  
Surface Modification ◽  
Cellulose Acetate ◽  
Excimer Laser ◽  
Dielectric Response ◽  
Cellulose Acetate Membrane ◽  
Arf Excimer Laser

ArF Laser Induced Photochemical Substitution of OH Radicals into Teflon Surface Using Al(OH)3 Solution

1992 ◽  
Vol 279 ◽  
Author(s):  
M. Okoshi ◽  
H. Kashiura ◽  
T. Miyokawa ◽  
K. Toyoda ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
Excimer Laser ◽  
Laser Light ◽  
Water Solution ◽  
Sample Surface ◽  
Oh Radicals ◽  
Xps Analysis ◽  
Air Atmosphere ◽  
Arf Excimer Laser ◽  
Teflon Film

ABSTRACTOH radicals were photochemically substituted for fluorine atoms in the teflon surface by using an ArF excimer laser light and an Al(OH)3 solution. This method is simple and can be performed in air atmosphere. In the process, the teflon film was placed on the Al(OH)3 which were dissolved in NaOH water solution; the ArF excimer laser light was irradiated the sample surface and the solution. By irradiating the laser, the surface was defluorinated by the aluminium atoms photodissociated from the Al(OH)3 solution, and the dangling bonds which were formed in the defluorinated surface combined with the OH radicals also photodissociated. The hydrophilic property of the photomodified surface was evaluated by the measurement of the contact angle with water. The defluorination and the OH radicals substitution were inspected by the XPS analysis and the ATR-FTIR measurement.

Novel Process for Ceramic Epitaxy Using Laser Mbe

1990 ◽  
Vol 201 ◽  
Author(s):  
Mamoru Yoshimoto ◽  
Hirotoshi Nagata ◽  
Tadashi Tsukahara ◽  
Satoshi Gonda ◽  
Hideomi Koinuma
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Xps Analysis ◽  
Heteroepitaxial Growth ◽  
Ceramic Thin Films ◽  
Depth Analysis ◽  
Band Profile ◽  
Arf Excimer Laser ◽  
Laser Mbe

AbstractAn ArF excimer laser MBE system specially designed for the deposition of ceramic thin films was used to construct atomi-cally defined epitaxial SrCuO2−x films. According to XPS analysis, Cu valence was evaluated to be 2+ in the film as-grown in the presence of 10−7 Torr NO2, but it was less than 2+ in the film prepared in the presence of 10−7Torr 02. In situ XPS depth analysis of as-grown SrCuO2−x film on SrTiO3 substrate revealed the band profile at the interface of the film and substarte. Ceramic superlattices composed of metallic SrCuO2−x (3∼8nm thick) and insulative SrTiO3 (8nm thick) were prepared by sequential heteroepitaxial growth.

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