scholarly journals Generalized collision operator for fast electrons interacting with partially ionized impurities

2018 ◽  
Vol 84 (6) ◽  
Author(s):  
L. Hesslow ◽  
O. Embréus ◽  
M. Hoppe ◽  
T. C. DuBois ◽  
G. Papp ◽  
...  

Accurate modelling of the interaction between fast electrons and partially ionized atoms is important for evaluating tokamak disruption mitigation schemes based on material injection. This requires accounting for the effect of screening of the impurity nuclei by the cloud of bound electrons. In this paper, we generalize the Fokker–Planck operator in a fully ionized plasma by accounting for the effect of screening. We detail the derivation of this generalized operator, and calculate the effective ion length scales, needed in the components of the collision operator, for a number of ion species commonly appearing in fusion experiments. We show that for high electric fields, the secondary runaway growth rate can be substantially larger than in a fully ionized plasma with the same effective charge, although the growth rate is significantly reduced at near-critical electric fields. Furthermore, by comparison with the Boltzmann collision operator, we show that the Fokker–Planck formalism is accurate even for large impurity content.

Author(s):  
J. J. Hren ◽  
S. D. Walck

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.


1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.


2009 ◽  
Vol 113 (39) ◽  
pp. 17045-17058 ◽  
Author(s):  
J.-S. McEwen ◽  
P. Gaspard ◽  
T. Visart de Bocarmé ◽  
N. Kruse

2000 ◽  
Vol 33 (19) ◽  
pp. 2379-2387 ◽  
Author(s):  
Jan Kalinowski ◽  
Massimo Cocchi ◽  
Piergiulio Di Marco ◽  
Waldemar Stampor ◽  
Gabriele Giro ◽  
...  

1998 ◽  
Vol 294 (1-3) ◽  
pp. 255-261 ◽  
Author(s):  
Dawn L. Scovell ◽  
Tim D. Pinkerton ◽  
Bruce A. Finlayson ◽  
Eric M. Stuve

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