scholarly journals Design of a dual-frequency high-power microwave generator

2011 ◽  
Vol 29 (4) ◽  
pp. 479-485 ◽  
Author(s):  
Juntao He ◽  
Yibing Cao ◽  
Jiande Zhang ◽  
Ting Wang ◽  
Junpu Ling
Keyword(s):  
High Power ◽  
Microwave Power ◽  
Wave Interaction ◽  
Total Power ◽  
Dual Frequency ◽  
High Power Microwave ◽  
Beam Wave ◽  
Interaction Efficiency ◽  
Beam Wave Interaction ◽  
Power Microwave

AbstractA new direction for high-power microwave (HPM) development is to investigate devices capable of producing HPMs with a complicated spectrum. In recent years, some HPM sources with two stable and separate frequencies have been investigated theoretically and experimentally. However, many short-comings still exist in these devices. Especially, the beam-wave interaction efficiency and the output microwave power are low in such devices. This paper proposes a novel dual-frequency HPM generator based on transition radiation. In the device, the electromagnetic fields are localized near the resonator cavities in the form of standing waves, and thus the interference between the different HPM components with different frequencies is weak. Compared with the existing dual-frequency devices, the new structure allows high beam-wave interaction efficiency and high output microwave power. As indicated in particle-in-cell simulation, with an electron beam of 500 kV voltage and 15.0 kA current guided by a magnetic field of 0.8 Tesla, an average power of 1.60 GW with a total power conversion efficiency of 21.3% is obtained, and the frequencies are 1.53 GHz and 3.29 GHz, respectively. Power level between two HPMs is comparable. The simulation results verify the feasibility of the dual-frequency HPM generator.

scholarly journals Design and Analysis of RF Section and Beam Wave Interaction for C Band 250 kW CW High Power Klystron

2016 ◽  
Vol 4 (3) ◽  
pp. 80-90
Author(s):  
O. S. Lamba ◽  
Ashtha D. Pal ◽  
Richa Meenu ◽  
A. Bandopadhyay ◽  
D. Kant ◽  
...  
Keyword(s):  
High Power ◽  
Wave Interaction ◽  
Beam Wave ◽  
Beam Wave Interaction

T-junction high power microwave power combiner

2010 ◽  
Vol 22 (10) ◽  
pp. 2369-2372
Author(s):  
张强 Zhang Qiang ◽  
袁成卫 Yuan Chengwei ◽  
刘列 Liu Lie
Keyword(s):  
High Power ◽  
Microwave Power ◽  
Power Combiner ◽  
High Power Microwave ◽  
Power Microwave

Preliminary experimental investigation of T-junction high power microwave power combiner

2011 ◽  
Vol 23 (2) ◽  
pp. 467-470
Author(s):  
张强 Zhang Qiang ◽  
袁成卫 Yuan Chengwei ◽  
刘列 Liu Lie ◽  
张军 Zhang Jun ◽  
李国林 Li Guolin
Keyword(s):  
Experimental Investigation ◽  
High Power ◽  
Microwave Power ◽  
Power Combiner ◽  
High Power Microwave ◽  
Power Microwave

Study of Split-Ring Resonators as a Metamaterial for High-Power Microwave Power Transmission and the Role of Defects

2013 ◽  
Vol 41 (6) ◽  
pp. 1679-1685 ◽  
Author(s):  
D. Shiffler ◽  
R. Seviour ◽  
E. Luchinskaya ◽  
E. Stranford ◽  
W. Tang ◽  
...  
Keyword(s):  
High Power ◽  
Microwave Power ◽  
Power Transmission ◽  
Ring Resonators ◽  
Split Ring ◽  
High Power Microwave ◽  
Split Ring Resonators ◽  
Power Microwave

scholarly journals Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits

2019 ◽  
Vol 30 ◽  
pp. 11002
Author(s):  
Vladimir Evseev ◽  
Mikhail Ivlev ◽  
Elena Lupanova ◽  
Sergey Nikulin ◽  
Vitaliy Petrov ◽  
...  
Keyword(s):  
High Power ◽  
Microwave Power ◽  
Contact Device ◽  
Complex Conjugate ◽  
Variable Load ◽  
Microwave Transistors ◽  
High Power Microwave ◽  
Non Linear ◽  
S Parameters ◽  
Power Microwave

In the practice by microwave power transistor amplifiers developing, the variable load method is usually used to determine the impedances of matching circuits in the complex conjugate matching mode. This solution involves the use of expensive equipment - coaxial impedance tuners and contact devices for mounting transistors in low impedance strip lines. An even more complicated and expensive way is the concept of X- parameters, based on the use of unique measuring equipment - a non-linear vector network analyzer, and a simulator for non-linear circuits design. The article proposes an alternative solution adapted to the operation of the transistor in real conditions and allowing to design the output stages of microwave power amplifiers using analysis and optimization of linear electrical circuits. The essence of the proposed solution is to automate the measurement of non-linear S-parameters of high-power microwave transistors in a contact device with tunable strip matching circuits for various DC supply voltage, frequency and input power mode in case of continuous or pulse input signal. The nonlinear S-parameters of the contact device are measured using the method of spatially remote variable load in the frequency range, in which the line conditioning and the maximum output power are achieved. The minimum of the reflected wave amplitude and the maximum gain are reached using movable strip matching transformers. The S-parameters measured in the coaxial line are automatically recalculated to the physical boundaries of the transistor by registering the positions of the input and output strip transformers.

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