On effects of non-systematic reflections on weak-beam images of partial dislocations

Author(s):  
K. Z. Botros ◽  
S. S. Sheinin

The main features of weak beam images of dislocations were first described by Cockayne et al. using calculations of intensity profiles based on the kinematical and two beam dynamical theories. The feature of weak beam images which is of particular interest in this investigation is that intensity profiles exhibit a sharp peak located at a position very close to the position of the dislocation in the crystal. This property of weak beam images of dislocations has an important application in the determination of stacking fault energy of crystals. This can easily be done since the separation of the partial dislocations bounding a stacking fault ribbon can be measured with high precision, assuming of course that the weak beam relationship between the positions of the image and the dislocation is valid. In order to carry out measurements such as these in practice the specimen must be tilted to "good" weak beam diffraction conditions, which implies utilizing high values of the deviation parameter Sg.

The weak-beam method of electron microscopy (Cockayne, Ray & Whelan 1969, 1970) has been used to investigate the dissociation of dislocations in silicon. Total dislocations with a/2<110> Burgers vectors were found to be dissociated into Shockley partial dislocations, with a separation of 7.5 +0.6 nm (75 + 6 Å) for the pure edge orientation and 4.1 +0.6 nm (41+ 6 Å) for the pure screw orientation. The intrinsic stacking-fault energy, calculated from the measured dissociation width using anisotropic elasticity theory, is 51 + 5 mJ m -2 (51 + 5 erg cm -2 ). The method has also been used to image partial dislocations at threefold dislocation nodes in silicon. All nodes in the specimens examined were found to be extended, and of about the same size, indicating that the intrinsic and extrinsic stacking-fault energies are comparable. Measurements of the radii of curvature of partial dislocations at the nodes gave a value of 50+15 mJ m -2 (50+15 erg cm -2 ) for the intrinsic stacking fault energy, using the method of Whelan (1959) as modified by Brown & Thölén (1964). Dislocations in silicon specimens annealed at a high temperature were found to be constricted along segments of the dislocation line. Evidence is presented which suggests that the constricted segments have climbed out of the slip plane.


Author(s):  
Paulo J. Ferreira

A fundamental understanding of the mechanical and physical behaviour of metals requires a knowledge of the stacking-fault energy (SFE). This aspect is important because the possibility of cross-slip and thus plastic deformation is a function of the SFE of the material. Impurities may segregate to the faults and change the SFE, which may affect the mechanical behaviour. For low SFE’s materials, the SFE can be determined rather accurately from transmission electron microscopy evaluation of the radius of curvature of dislocation nodes formed by the attractive interaction of dislocations (Fig. 1).This work is directed towards applying the T.E.M. technique to determine the SFE of a 310S stable austenitic stainless steel. The specimens were observed in a JEOL 4000 microscope operated at an accelerating voltage of 200 kV, and equipped with a double tilt stage. Conventional two beam bright field images were used to determine the Burgers vector and line direction of the partial dislocations.


Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.


1980 ◽  
Vol 11 (7) ◽  
pp. 1125-1130 ◽  
Author(s):  
G. J. L. Wegen ◽  
P. M. Bronsveld ◽  
J. Th. M. Hosson

1972 ◽  
Vol 26 (3) ◽  
pp. 765-768 ◽  
Author(s):  
H. M. Kramer ◽  
J. A. Venables

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