Dislocations and stacking faults in stainless steel

1957 ◽  
Vol 240 (1223) ◽  
pp. 524-538 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Grain Boundaries ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Thin Sections ◽  
Partial Dislocations ◽  
Transmission Electron

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.

THE STACKING-FAULT ENERGY IN α-SILVER – TIN ALLOYS

1967 ◽  
Vol 45 (2) ◽  
pp. 787-795 ◽  
Author(s):  
A. W. Ruff Jr. ◽  
L. K. Ives
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Pure Silver ◽  
Tin Alloys ◽  
Transmission Electron ◽  
Direct Measurements ◽  
Extended Dislocation

Direct measurements by transmission electron microscopy on extended dislocation nodes in alloys of tin in silver have led to values for the intrinsic stacking-fault energy. The values decreased smoothly from 23 erg/cm2 for pure silver to 4.2 erg/cm2 for 7.8 at.% tin. The results are compared with previous determinations in other silver-base alloys.

High-density stacking faults in a supersaturated nitrided layer on austenitic stainless steel

2016 ◽  
Vol 49 (6) ◽  
pp. 1967-1971 ◽  
Author(s):  
Ke Tong ◽  
Fei Ye ◽  
Honglong Che ◽  
Ming Kai Lei ◽  
Shu Miao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Austenitic Stainless Steel ◽  
Nitrided Layer ◽  
Stacking Faults ◽  
High Density ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

The nitrogen-supersaturated phase produced by low-temperature plasma-assisted nitriding of austenitic stainless steel usually contains a high density of stacking faults. However, the stacking fault density observed in previous studies was considerably lower than that determined by fitting the X-ray diffraction pattern. In this work, it has been confirmed by high-resolution transmission electron microscopy that the strip-shaped regions of about 3–25 nm in width observed at relatively low magnification essentially consist of a series of stacking faults on every second {111} atomic plane. A microstructure model of the clustered stacking faults embedded in a face-centred cubic structure was built for these regions. The simulated X-ray diffraction and transmission electron microscopy results based on this model are consistent with the observations.

Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (11-20) 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 299-302 ◽  
Author(s):  
Hosni Idrissi ◽  
Maryse Lancin ◽  
Joel Douin ◽  
G. Regula ◽  
Bernard Pichaud
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Etching ◽  
Stacking Faults ◽  
Sample Surface ◽  
Cubic Phase ◽  
Dynamical Study ◽  
Weak Beam ◽  
Partial Dislocations ◽  
Transmission Electron

4H-SiC samples were bent in compression mode at temperature ranging from 400°C to 700°C. The introduced-defects were identified by Weak Beam (WB) and High Resolution Transmission Electron Microscopy (HRTEM) techniques. They consist of double stacking faults bound by 30° Si(g) partial dislocations whose glide locally transforms the material in its cubic phase. The velocity of partial dislocations was measured after chemical etching of the sample surface. The formation and the expansion of the double stacking faults are discussed.

DISLOCATION DISSOCIATION IN HIGH Tc BiSrCaCuO

1989 ◽  
Vol 03 (17) ◽  
pp. 1359-1362 ◽  
Author(s):  
FANG LIU ◽  
HUI GU ◽  
TIAN XIAO LIN ◽  
JIN LONG ZHANG ◽  
GUANG CHENG XIONG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Basal Plane ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
High Tc ◽  
Type Formula ◽  
Transmission Electron ◽  
Dislocation Dissociation

Transmission electron microscopy (TEM) shows that the dislocation on basal plane (001) of high T c BiSrCaCuO can dissociate into 2 partials of the type [Formula: see text]. The related stacking fault energy is estimated of the order about µb/365 similar to that observed in Cu and implication of this finding has been discussed.

Transmission electron microscope investigation of indentation induced dislocation configurations on the (001) GaSb face

1994 ◽  
Vol 209 (3) ◽  
Author(s):  
J. Doerschel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
Electron Microscope Investigation ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Induced Dislocation

AbstractDislocation configurations induced by room temperature microindentations on the (001) face of GaSb (undoped and Te-doped) have been studied using high voltage transmission electron microscopy. Perfect and partial dislocations could be found in all four arms of the dislocation rosette around the indent. Microtwins and rarely single stacking faults are associated with the partials. Contrary to other binary III–V compounds, an “inverse” glide prism along the [1[unk]0]/[[unk]10] rosette arms is created and it is bounded by {111}

Tem Structural Studies on Zn+ Implanted and As+ /Zn+ Dually Implanted GaAs

1985 ◽  
Vol 45 ◽  
Author(s):  
E. Morita ◽  
J. Kasahara ◽  
M. Arai ◽  
S. Kawado
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stacking Fault ◽  
Structural Studies ◽  
The Core ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Stacking Fault Tetrahedra ◽  
Means Of Transmission

ABSTRACTMicrodefects in Cr-doped SI LEC (001) GaAs wafers which were implanted with Zn+ or As /Zn and capless-annealed in an As ambient have been studied by means of transmission electron microscopy. Most of the microdefects in Zn +- implanted GaAs specimens were identified as precipitates and stacking fault tetrahedra (SFTs). Every SFT was accompanied by a precipitate at the apex. Most of the precipitates were distributed from Rp to Rp + 2∆Rp. Two types (α and β) of SFTs were differentiated by the arrangement of atoms in the core of the stair-rod partial dislocations bounding the periphery of the SFTs in a polar Frystal. β-SFTs were, however, predominantly formed in Zn+ implanted GaAs specimens. Dual implantation of As+ and Zn+ suppressed the formation of SFTs, but not that of precipitates. The formation of SFTs was found to be influenced by the deviation in stoichiometry.

Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 85-89 ◽  
Author(s):  
Fang Zhen Wu ◽  
Huan Huan Wang ◽  
Yu Yang ◽  
Jian Qiu Guo ◽  
Balaji Raghothamachar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Opposite Sign ◽  
Stacking Faults ◽  
Stacking Fault ◽  
X Ray ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Structure Simulation ◽  
Simulation Results ◽  
Polytype Structure

Synchrotron white beam x-ray topography (SWBXT), synchrotron monochromatic beam x-ray topography (SMBXT), and high resolution transmission electron microscopy (HRTEM) studies have been carried out on stacking faults in PVT grown 4H-SiC crystal. Their fault vectors were determined by SWBXT to be 1/3<-1100>, 1/2<0001>, 1/6<-2203>, 1/12<4-403>, 1/12<-4403>. HRTEM studies reveal their similarity in stacking sequences as limited numbers of bilayers of 6H polytype structure. Simulation results of the two partial dislocations associated with the stacking faults in SMBXT images reveal the opposite sign nature of their Burgers vectors. A mechanism for stacking fault formation via 2D nucleation is postulated.

Stress-induced C14→C15 phase transformation in a Zr(Fe,Cr)2 Laves structured nanophase

2020 ◽  
Vol 53 (1) ◽  
pp. 222-225 ◽  
Author(s):  
Fusen Yuan ◽  
Chengze Liu ◽  
Fuzhou Han ◽  
Yingdong Zhang ◽  
Ali Muhammad ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Transformation ◽  
Phase Boundary ◽  
Shear Deformation ◽  
Orientation Relationship ◽  
Stacking Faults ◽  
Hexagonal Close Packed ◽  
Partial Dislocations ◽  
Transmission Electron

The C14 (hexagonal close-packed) and C15 (face-centred cubic) close-packed structures are found to coexist in an individual Zr(Fe,Cr)2 Laves structured nanophase in Zircaloy-4 alloy with shear deformation. The orientation relationship between C15 and C14 is [\bar 1 10]C15//[11\bar 20]C14 and (\bar 111)C15//(0001)C14. The stacking faults (SFs) in the C15 structure and the high-density SFs between C15 and C14 have been identified using transmission electron microscopy, which showed they originated on close-packed planes by emission of 1/6〈\bar 2 \bar 1\bar 1〉 Shockley partial dislocations from the phase boundary. Furthermore, the stress-induced C14→C15 phase transformation took place during the shear deformation.

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