Low-temperature Scanning Electron Microscope constructed with high-excitation objective lens

Author(s):  
H. Koike ◽  
T. Inoué

Low temperature microscope technology can be traced back to the last century including the time of light microscope, and its history is over a hundred years. In the field of electron microscopy, low temperature techniques such as the freeze-fracture replica, freeze-sectioning, freeze-substitution, etc. were tested up to early 1960s. According to the progress of the rapid-freezing method, the freeze-substitution and freeze-etching replica methods have provided great successful results.The low temperature scanning electron microscope (LTSEM) was also tested by Echlin et al. in 1970, and thereafter, a number of LTSEM constructions were attempted. These LTSEMs are generally classified into two groups: the type with fracturing and coating facilities directly attached to the SEM column, and the group having a separated preparation chamber and a transfer device. The LTSEM so far constructed were reviewed comprehensively in greater detail. Some such instruments were designed taking account of stringent requirements of low temperature techniques. These systems, however, seemed to be too comprehensive, involving complex procedures as compared withe their resolutions. In comparison with the conspicuous results obtained by other low temperature techniques, the LTSEM can be regarded as still in the stage prior to practical application from the viewpoint of the high resolution. In consideration of these circumstances, the present paper aims at providing a new LTSEM to realize simple operation retaining the advantage of the ultrastructural preservation by the rapid-freezing and the high resolution by introducing the high-excitation objective lens.

2000 ◽  
Vol 6 (S2) ◽  
pp. 764-765
Author(s):  
H. Kazumori ◽  
A. Yamada ◽  
M. Mita ◽  
T. Nokuo ◽  
M. Saito

A newly developed cold FE-GUN which enables to us to obtain large probe current and low emission noise, and conical strongly excited objective lens has been installed on the JSM-6700F Scanning Electron Microscope (SEM). In the range of accelerating voltages from 0.5 to 15kV, this instrument has got much better resolution as compared with in-lens type SEM (Ohyama et al 1986)(Fig. 1). We can obtain high-resolution secondary electron images with large samples (ex. 150mm ϕ×10mmH).Our old type objective lens (Kazumori et al 1994) has the limitation of working distance (WD), but the new lens enables us to work at very short WD at accelerating voltage of 15kV. As a result the spherical (Cs) and chromatic (Cc) aberration constants are 1.9mm and 1.7mm respectively at a WD of 3mm.In order to get large probe current, we increased emission current and got near the distance between the t ip of emi tter and the pr inciple plane of condenser lens.


Author(s):  
P. S. D. Lin ◽  
M. K. Lamvik

Unlike a CEM or high resolution STEM, where the specimen is immersed between the pole pieces of the objective lens, a scanning electron microscope has its specimen stage situated off the lens field. After scattering with the specimen, electrons follow straight paths. It is rather simple to deduce the information from the signal. A transmission stage in a SEM is therefore a useful device for studying various scattering processes and the contrast thus generated.The transmission stage can also be used in connection with the investigation of secondary and backscattered electron emission phenomena. Previously, a back-scattered electron detector was installed in one of the scanning microscopes in the laboratory.


1997 ◽  
Vol 279 (1-2) ◽  
pp. 85-94 ◽  
Author(s):  
J.B. le Grand ◽  
M.P. Bruijn ◽  
C. Patel ◽  
P.A.J. de Korte ◽  
S. Lemke ◽  
...  

1983 ◽  
Vol 132 (2) ◽  
pp. 209-217 ◽  
Author(s):  
K. E. Carr ◽  
T. L. Hayes ◽  
M. McKoon ◽  
M. Sprague ◽  
S. J. Bastacky

1989 ◽  
Vol 19 (2) ◽  
pp. 306-314 ◽  
Author(s):  
Paulo J.M. Monteiro ◽  
Ahmed I. Rashed ◽  
Jacob Bastacky ◽  
Thomas L. Hayes

Author(s):  
J. Ximen ◽  
P. S. D. Lin ◽  
J. B. Pawley ◽  
M. Schippert

By providing higher image contrast and reduced charging artifacts, the low voltage scanning electron microscope (LVSEM) is a valuable tool for surface characterization, of particular importance on nonconductive material such as biological specimens. Several SEM designs optimized for use at low voltage have been proposed.Recently, we have designed a new high resolution LVSEM using a field emission gun. The key problem is to decrease both the spherical and chromatic aberration coefficients by using a magnetic lens of small bore diameters(5mm and 10mm) and a narrow gap (7.5mm) (FIG. 1). In our first design, the magnetic lens is built around the side-entry stage of a Philips 300kV TEM and performs as well as that in the present Hitachi SEM H-900 or H-900S. Its simple design has been chosen for reliability and flexibility in farbrication.


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