Comparison of Zone Axes for Convergent Beam Electron Diffraction Strain Measurements of a Strained Silicon Transistor

2008 ◽  
Vol 14 (S2) ◽  
pp. 852-853
Author(s):  
DR Diercks ◽  
MJ Kaufman
Keyword(s):  
New Mexico ◽  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Strained Silicon ◽  
Strain Measurements ◽  
Beam Electron ◽  
Convergent Beam ◽  
Silicon Transistor

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Direct strain measurement in a 65nm node strained silicon transistor by convergent-beam electron diffraction

2006 ◽  
Vol 89 (16) ◽  
pp. 161907 ◽  
Author(s):  
Peng Zhang ◽  
Andrei A. Istratov ◽  
Eicke R. Weber ◽  
Christian Kisielowski ◽  
Haifeng He ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Strain Measurement ◽  
Convergent Beam Electron Diffraction ◽  
Strained Silicon ◽  
Beam Electron ◽  
Convergent Beam ◽  
Silicon Transistor

Quantitative Strain Measurement in Sub-45 nm CMOS Transistors by Convergent Beam Electron Diffraction (CBED) at Low Temperature and Nano Beam Diffraction (NBD)

2008 ◽  
Vol 14 (S2) ◽  
pp. 386-387 ◽  
Author(s):  
L Clement ◽  
D Delille
Keyword(s):  
New Mexico ◽  
Electron Diffraction ◽  
Low Temperature ◽  
Strain Measurement ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Cmos Transistors ◽  
Convergent Beam ◽  
Beam Diffraction

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

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