Local Strain Measurements on Strained-Si/SiGe Heterostructures Using Automatic Convergent Beam Electron Diffraction (CBED) Analysis

1999 ◽  
Vol 594 ◽  
Author(s):  
S. Krämer ◽  
J. Mayer

AbstractEnergy filtered convergent beam electron diffraction (CBED) was used to investigate localized strain in aluminium interconnects. An analysis of the higher order Laue zone (HOLZ) line positions in CBED patterns makes it possible to measure the lattice strain with high accuracy (∼10−4) and high spatial resolution (10 to 100 nm). The strain development in a single grain was measured during thermal cycling between −170°C and + 100°C. The grain showed reversible, elastic behaviour over the whole temperature range building up large strains at low temperatures. By comparing with finite element simulations, a detailed understanding of the tri-axial strain state could be achieved.


2010 ◽  
Vol 16 (S2) ◽  
pp. 742-743
Author(s):  
D Diercks ◽  
G Lian ◽  
J Chung ◽  
M Kaufman

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


2008 ◽  
Vol 14 (S2) ◽  
pp. 852-853
Author(s):  
DR Diercks ◽  
MJ Kaufman

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008


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