Highly Automated Electron Energy-Loss Spectroscopy Elemental Quantification

2014 ◽  
Vol 20 (3) ◽  
pp. 798-806 ◽  
Author(s):  
Raman D. Narayan ◽  
J. K. Weiss ◽  
Peter Rez

AbstractA model-based fitting algorithm for electron energy-loss spectroscopy spectra is introduced, along with an intuitive user-interface. As with Verbeeck & Van Aert, the measured spectrum, rather than the single scattering distribution, is fit over a wide range. An approximation is developed that allows for accurate modeling while maintaining linearity in the parameters that represent elemental composition. Also, a method is given for generating a model for the low-loss background that incorporates plural scattering. Operation of the user-interface is described to demonstrate the ease of use that allows even nonexpert users to quickly obtain elemental analysis results.

2010 ◽  
Vol 110 (7) ◽  
pp. 866-876 ◽  
Author(s):  
Sergey Yakovlev ◽  
Manoj Misra ◽  
Shanling Shi ◽  
Emre Firlar ◽  
Matthew Libera

1999 ◽  
Vol 5 (6) ◽  
pp. 437-444 ◽  
Author(s):  
Stephen B. Rice ◽  
Hazel H. Bales ◽  
John R. Roth ◽  
Allen L. Whiteside

Abstract: A set of uranium compound particles relevant to contaminated soils and other environmental concerns surrounding uranium bioavailability were studied by electron energy-loss spectroscopy (EELS). Core-loss EELS results suggest that uranium 4+ compounds have an energy loss resolvable from 6+ compounds. Shoulders on the uranium O4,5 edge further distinguish UO2 from UF4. Low-loss characteristics distinguish carbon-free uranium oxide specimens on holey substrates. In the presence of carbon, correction techniques must be applied. Uranium oxides, fluorides, and minerals show a tendency toward reduction of uranium toward 4+ under the beam. The electron dose required to achieve the transformation from 6+ to 4+ is more severe than that usually required to obtain satisfactory spectra, but the possibility for reduction should be considered. The conditions for low-loss analysis need not be as vigorous as those for core losses, and can be done without altering the valence of most oxides.


2020 ◽  
Vol 26 (S2) ◽  
pp. 472-473
Author(s):  
Bibash Sapkota ◽  
Jinglong Guo ◽  
Lopa Bhatt ◽  
Nathan Rosenmann ◽  
Serdar Ogut ◽  
...  

2004 ◽  
Vol 10 (S02) ◽  
pp. 842-843
Author(s):  
Rolf Erni ◽  
Nigel D. Browning

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.


2001 ◽  
Vol 693 ◽  
Author(s):  
C. J. Fall ◽  
R. Jones ◽  
P. R. Briddon ◽  
A. T. Blumenau ◽  
T. Frauenheim ◽  
...  

AbstractThe electronic structure of dislocations in GaN is controversial. Several experimental techniques such as carrier mobility studies and cathodoluminescence experiments have indicated that dislocations are charged while theoretical studies point to intrinsic states and/or point defect accumulation along the core as a source of electrical activity. Electron Energy Loss Spectroscopy (EELS) studies have the ability to probe the electronic structure of extended defects. Here we report rst principles calculations of the EELS spectrum applied to edge dislocations in GaN. It is found that the electrostatic potential at N atoms in the vicinity of the dislocation varies by the order of a volt and casts doubt on any simple interpretation of core loss spectroscopy. On the other hand, low loss spectroscopy leads directly to detailed information about any gap states. The low loss spectrum obtained by the theory is in good agreement with recent experimental work and indicates that threading dislocations in p-type GaN possess acceptor levels in the upper half of the gap.


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