Modular Ka-band switch matrices using two RF MEMS technologies

This paper presents the design and measurement of two different switch matrix modules based on Radio Frequency Microelectromechanical System (RF MEMS) switches. The operational frequency range is between 25.5 GHz and 26.5 GHz for data links between a Geostationary Earth Orbit (GEO) relay satellite and Low Earth Orbit (LEO) satellites. The switch matrix implements a key functionality for tracking the incident signals of the LEO satellites on the receive feed antenna array of the GEO satellite's reflector antenna. Two different technologies are used to build simplified switch matrix modules suitable for realizing the full functionality switching matrix. Rogers RT/Duroid 5880 with commercially available RF MEMS is used to build the first module, while EADS in house RF MEMS are integrated in Rogers Ultralam 3850 Liquid Crystal Polymer (LCP) for the second module. Maximum insertion losses of 8.5 dB and 10.2 dB have been measured for the Rogers RT/Duroid 5880 and the LCP module, respectively. Isolation is higher than 45 dB and a minimum return loss of 15 dB is shown. Finally, the measured losses in the LCP module are analyzed and suitable improvements are discussed.

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Modeling and Validation of Capacitive Type RF MEMS Switches for Low Actuation Voltage and High Isolation

Volume 1: Advances in Control Design Methods; Advances in Nonlinear Control; Advances in Robotics; Assistive and Rehabilitation Robotics; Automotive Dynamics and Emerging Powertrain Technologies; Automotive Systems; Bio Engineering Applications; Bio-Mechatronics and Physical Human Robot Interaction; Biomedical and Neural Systems; Biomedical and Neural Systems Modeling, Diagnostics, and Healthcare ◽

10.1115/dscc2018-8939 ◽

2018 ◽

Cited By ~ 1

Author(s):

Suhas S. Mohite ◽

Mukesh Madhewar ◽

Vishram B. Sawant

Keyword(s):

High Frequency ◽

Rf Mems ◽

Actuation Voltage ◽

Mems Switches ◽

High Isolation ◽

Rf Mems Switches ◽

Optimum Geometry ◽

Mechanical Resonant Frequency ◽

Structural Configurations ◽

Insertion Losses

Design objectives in capacitive type radio frequency micro electro mechanical switches (RF-MEMS) are to reduce actuation voltages and to obtain low insertion losses with high isolation. In this study, we report design, modeling and simulation of three new structural configurations using ANSYS to obtain the optimum geometry; further high frequency simulations are performed using HFSS to obtain low insertion losses and high isolation. The designed switches require only 3.9 to 5 V as pull-in voltage for actuation. The mechanical resonant frequency and quality factor are in the range of 6.5 to 8.7 kHz and 1.1 to 1.2, respectively. Switching times for all the designs are 32 to 38 μs at their respective pull-in voltages. Two of the switch designs have insertion loss of less than 0.25 to 0.8 dB at 60 and 50 GHz, and isolation greater than 58 dB for all three designs.

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MEMS Technologies and Devices for Single-Chip RF Front-Ends

Journal of Microelectronics and Electronic Packaging ◽

10.4071/1551-4897-3.4.160 ◽

2006 ◽

Vol 3 (4) ◽

pp. 160-168 ◽

Cited By ~ 2

Author(s):

Clark T.-C. Nguyen

Keyword(s):

Rf Mems ◽

Frequency Control ◽

Mems Devices ◽

Single Chip ◽

Micromechanical Resonators ◽

Mems Switches ◽

Semiconductor Switches ◽

Rf Mems Switches ◽

Insertion Losses ◽

Levels Of Integration

Micromechanical (or “μmechanical”) components for communication applications fabricated via IC-compatible MEMS technologies and capable of low-loss filtering, mixing, switching, and frequency generation, are described with the intent to not only miniaturize and lower the parts counts of wireless front-ends via higher levels of integration, but also to eventually raise robustness (against interferers) and lower power consumption when used in alternative architectures that take advantage of the abundant frequency control enabled by RF MEMS devices. Among the devices described are vibrating micromechanical resonators with Q's exceeding 10,000 at GHz frequencies; mechanical circuits comprised of such vibrating resonators; tunable MEMS-based capacitors and inductors with much higher Q than achievable by conventional IC counterparts; and RF MEMS switches with insertion losses and linearity superior to those attainable by present-day semiconductor switches.

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