Potassium hydroxide eluent for nonsuppressed anion chromatography of cyanide, sulfide, arsenite, and other weak acids

1985 ◽  
Vol 57 (4) ◽  
pp. 829-833 ◽  
Author(s):  
Tetsuo. Okada ◽  
Tooru. Kuwamoto
2009 ◽  
Vol 7 (4) ◽  
pp. 900-908 ◽  
Author(s):  
Ljiljana Mihajlović ◽  
Snežana Nikolić-Mandić ◽  
Branislav Vukanović ◽  
Ranđel Mihajlović

AbstractNatural monocrystalline pyrite and chalcopyrite were examined as new indicator electrodes for the potentiometric titration of weak acids in tert-butanol and iso-propanol. The electrodes investigated demonstrated a linear dynamic response for p-toluenesulfonic acid concentrations in the range from 0.1 to 0.001 M, with a Nernstian slope of 48 mV per decade for pyrite in tert-butanol. Sodium methylate, potassium hydroxide and tetrabutylammonium hydroxide (TBAH) proved to be suitable titrating agents. The response time was less than 12 s and the lifetime of the electrodes was higher than 1 year. The advantages of the electrodes are long-term stability, rapid response, reproducibility, easy preparation and low cost.


2010 ◽  
Vol 64 (5) ◽  
Author(s):  
Ivan Pantić ◽  
Ranđel Mihajlović ◽  
Ljiljana Mihajlović

AbstractA deuterium-palladium electrode was employed as a new indicator electrode for the titration of weak acids in acetonitrile and benzonitrile. The investigated electrode showed a linear dynamic response for p-toluenesulfonic acid in the concentration range from 0.001 M to 0.1 M with a Nernstian slope of 48 mV in acetonitrile. Sodium methylate, potassium hydroxide and tetrabutylammonium hydroxide proved to be very suitable titrating agents for these titrations. The response time was less than 10-11 s and the lifetime of the electrode was limitless. Advantages of the electrode are: long-term stability, fast response, reproducibility, easy preparation and low cost.


Author(s):  
Ahmed Elkhebu ◽  
◽  
Adnan Zainorabidin ◽  
Ismail Hj. Bakar ◽  
Bujang B. K. Huat ◽  
...  

Author(s):  
Lori L. Sarnecki

Abstract This paper presents two new methods using potassium hydroxide (KOH) as a wet etch technique to successfully stop on gate oxide and find the submicron gate oxide failures that correspond to failure response sites. Applications of this new technique to submicron gate oxide failures on both planar and deep trench MOSFET devices are reported in this paper.


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