scholarly journals Chemical Vapor Deposition Growth of Two-Dimensional Compound Materials: Controllability, Material Quality, and Growth Mechanism

2020 ◽  
Author(s):  
Lei Tang ◽  
Junyang Tan ◽  
Huiyu Nong ◽  
Bilu Liu ◽  
Hui-Ming Cheng
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Chemical Vapor Deposition Growth ◽  
Material Quality ◽  
Compound Materials

Chemical vapor deposition of layered two-dimensional MoSi2N4 materials

Science ◽  
2020 ◽  
Vol 369 (6504) ◽  
pp. 670-674 ◽  
Author(s):  
Yi-Lun Hong ◽  
Zhibo Liu ◽  
Lei Wang ◽  
Tianya Zhou ◽  
Wei Ma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Density Functional ◽  
Chemical Vapor ◽  
Large Family ◽  
Density Functional Theory Calculations ◽  
Layered Materials ◽  
Molybdenum Nitride ◽  
Two Dimensional ◽  
Chemical Vapor Deposition Growth

Identifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride to passivate its surface, which enabled the growth of centimeter-scale monolayer films of MoSi2N4. This monolayer was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. This material exhibited semiconducting behavior (bandgap ~1.94 electron volts), high strength (~66 gigapascals), and excellent ambient stability. Density functional theory calculations predict a large family of such monolayer structured two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals.

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

NANO ◽  
2018 ◽  
Vol 13 (08) ◽  
pp. 1850088 ◽  
Author(s):  
Yang Wang ◽  
Yu Cheng ◽  
Yunlu Wang ◽  
Shuai Zhang ◽  
Chen Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Domain Boundaries ◽  
Cvd Growth ◽  
Graphene Domain

Many aspects in the chemical vapor deposition (CVD) growth of graphene remain unclear such as its behavior near the catalyst grain boundaries. Here we investigate the CVD growth mechanism of graphene across the Cu grain boundaries using unidirectional aligned graphene domains, which simplifies the analysis of both graphene and Cu to a large extent. We found that for a graphene domain grown across the Cu grain boundary, the domain orientation is determined by the Cu grain where the domain nucleation center is located, and the Cu grain boundary will not change the growth behavior for this graphene domain. This growth mechanism is consistent with the Cu-step-attached nucleation and edge-attachment-limited growth mechanism for H-terminated graphene domains and will provide more guidance for the synthesis of high-quality graphene with less domain boundaries.

The geometry of hexagonal boron nitride clusters in the initial stages of chemical vapor deposition growth on a Cu(111) surface

Nanoscale ◽  
2019 ◽  
Vol 11 (28) ◽  
pp. 13366-13376 ◽  
Author(s):  
Zhong-Qiang Liu ◽  
Jichen Dong ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Critical Size ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Chemical Vapor Deposition Growth ◽  
One Dimensional

In the initial stages of chemical vapor deposition on a Cu(111) surface, one-dimensional Bn–1Nn (N-rich environment) or BnNn–1 (B-rich) chains first appear, and they transform to two-dimensional sp2 networks or h-BN islands at a critical size of 13.

scholarly journals Anomalous thickness dependence of Curie temperature in air-stable two-dimensional ferromagnetic 1T-CrTe2 grown by chemical vapor deposition

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Lingjia Meng ◽  
Zhang Zhou ◽  
Mingquan Xu ◽  
Shiqi Yang ◽  
Kunpeng Si ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Curie Temperature ◽  
Vapor Deposition ◽  
Theoretical Calculations ◽  
Chemical Vapor ◽  
Anomalous Hall Effect ◽  
Two Dimensional ◽  
Ambient Conditions ◽  
Chemical Vapor Deposition Growth ◽  
Out Of Plane

AbstractThe discovery of ferromagnetic two-dimensional van der Waals materials has opened up opportunities to explore intriguing physics and to develop innovative spintronic devices. However, controllable synthesis of these 2D ferromagnets and enhancing their stability under ambient conditions remain challenging. Here, we report chemical vapor deposition growth of air-stable 2D metallic 1T-CrTe2 ultrathin crystals with controlled thickness. Their long-range ferromagnetic ordering is confirmed by a robust anomalous Hall effect, which has seldom been observed in other layered 2D materials grown by chemical vapor deposition. With reducing the thickness of 1T-CrTe2 from tens of nanometers to several nanometers, the easy axis changes from in-plane to out-of-plane. Monotonic increase of Curie temperature with the thickness decreasing from ~130.0 to ~7.6 nm is observed. Theoretical calculations indicate that the weakening of the Coulomb screening in the two-dimensional limit plays a crucial role in the change of magnetic properties.

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