Band Engineering SnTe via Trivalent Substitutions for Enhanced Thermoelectric Performance

Author(s):  
Xuemei Zhang ◽  
Zhongyi Wang ◽  
Bo Zou ◽  
Madison K. Brod ◽  
Jianbo Zhu ◽  
...  
2021 ◽  
Vol 103 (8) ◽  
Author(s):  
F. Garmroudi ◽  
A. Riss ◽  
M. Parzer ◽  
N. Reumann ◽  
H. Müller ◽  
...  

Nano Energy ◽  
2021 ◽  
Vol 81 ◽  
pp. 105683
Author(s):  
Zhuang-Hao Zheng ◽  
Xiao-Lei Shi ◽  
Dong-Wei Ao ◽  
Wei-Di Liu ◽  
Yue-Xing Chen ◽  
...  

APL Materials ◽  
2019 ◽  
Vol 7 (9) ◽  
pp. 091107 ◽  
Author(s):  
A. Doi ◽  
S. Shimano ◽  
D. Inoue ◽  
T. Kikitsu ◽  
T. Hirai ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (32) ◽  
pp. 24908-24914 ◽  
Author(s):  
Daifeng Zou ◽  
Guozheng Nie ◽  
Yu Li ◽  
Ying Xu ◽  
Jianguo Lin ◽  
...  

The enhancement of the thermoelectric properties of stannite-type Cu2ZnSnSe4 under biaxial strain can be ascribed to band convergence of the valence bands near the Fermi level.


2016 ◽  
Vol 113 (29) ◽  
pp. E4125-E4132 ◽  
Author(s):  
Jing Shuai ◽  
Huiyuan Geng ◽  
Yucheng Lan ◽  
Zhuan Zhu ◽  
Chao Wang ◽  
...  

Complex Zintl phases, especially antimony (Sb)-based YbZn0.4Cd1.6Sb2 with figure-of-merit (ZT) of ∼1.2 at 700 K, are good candidates as thermoelectric materials because of their intrinsic “electron–crystal, phonon–glass” nature. Here, we report the rarely studied p-type bismuth (Bi)-based Zintl phases (Ca,Yb,Eu)Mg2Bi2 with a record thermoelectric performance. Phase-pure EuMg2Bi2 is successfully prepared with suppressed bipolar effect to reach ZT ∼ 1. Further partial substitution of Eu by Ca and Yb enhanced ZT to ∼1.3 for Eu0.2Yb0.2Ca0.6Mg2Bi2 at 873 K. Density-functional theory (DFT) simulation indicates the alloying has no effect on the valence band, but does affect the conduction band. Such band engineering results in good p-type thermoelectric properties with high carrier mobility. Using transmission electron microscopy, various types of strains are observed and are believed to be due to atomic mass and size fluctuations. Point defects, strain, dislocations, and nanostructures jointly contribute to phonon scattering, confirmed by the semiclassical theoretical calculations based on a modified Debye–Callaway model of lattice thermal conductivity. This work indicates Bi-based (Ca,Yb,Eu)Mg2Bi2 is better than the Sb-based Zintl phases.


2017 ◽  
Vol 7 (18) ◽  
pp. 1700076 ◽  
Author(s):  
Xiaojian Tan ◽  
Ling Wang ◽  
Hezhu Shao ◽  
Song Yue ◽  
Jingtao Xu ◽  
...  

2018 ◽  
Vol 115 (5) ◽  
pp. 879-884 ◽  
Author(s):  
Te-Huan Liu ◽  
Jiawei Zhou ◽  
Mingda Li ◽  
Zhiwei Ding ◽  
Qichen Song ◽  
...  

Recent advancements in thermoelectric materials have largely benefited from various approaches, including band engineering and defect optimization, among which the nanostructuring technique presents a promising way to improve the thermoelectric figure of merit (zT) by means of reducing the characteristic length of the nanostructure, which relies on the belief that phonons’ mean free paths (MFPs) are typically much longer than electrons’. Pushing the nanostructure sizes down to the length scale dictated by electron MFPs, however, has hitherto been overlooked as it inevitably sacrifices electrical conduction. Here we report through ab initio simulations that Dirac material can overcome this limitation. The monotonically decreasing trend of the electron MFP allows filtering of long-MFP electrons that are detrimental to the Seebeck coefficient, leading to a dramatically enhanced power factor. Using SnTe as a material platform, we uncover this MFP filtering effect as arising from its unique nonparabolic Dirac band dispersion. Room-temperature zT can be enhanced by nearly a factor of 3 if one designs nanostructures with grain sizes of ∼10 nm. Our work broadens the scope of the nanostructuring approach for improving the thermoelectric performance, especially for materials with topologically nontrivial electronic dynamics.


2016 ◽  
Vol 18 (10) ◽  
pp. 7141-7147 ◽  
Author(s):  
X. J. Tan ◽  
H. Z. Shao ◽  
J. He ◽  
G. Q. Liu ◽  
J. T. Xu ◽  
...  

Sn vacancy is found to play an important role in the band engineering and thermoelectric performance of SnTe.


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