Boosting the thermoelectric performance of Fe2VAl−type Heusler compounds by band engineering

2021 ◽  
Vol 103 (8) ◽  
Author(s):  
F. Garmroudi ◽  
A. Riss ◽  
M. Parzer ◽  
N. Reumann ◽  
H. Müller ◽  
...  
Nano Energy ◽  
2021 ◽  
Vol 81 ◽  
pp. 105683
Author(s):  
Zhuang-Hao Zheng ◽  
Xiao-Lei Shi ◽  
Dong-Wei Ao ◽  
Wei-Di Liu ◽  
Yue-Xing Chen ◽  
...  

2020 ◽  
Vol 8 (47) ◽  
pp. 25187-25197
Author(s):  
Parul R. Raghuvanshi ◽  
Suman Mondal ◽  
Amrita Bhattacharya

Enhancing the thermoelectric performance of half Heusler through isovalent compositional tailoring.


APL Materials ◽  
2019 ◽  
Vol 7 (9) ◽  
pp. 091107 ◽  
Author(s):  
A. Doi ◽  
S. Shimano ◽  
D. Inoue ◽  
T. Kikitsu ◽  
T. Hirai ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (32) ◽  
pp. 24908-24914 ◽  
Author(s):  
Daifeng Zou ◽  
Guozheng Nie ◽  
Yu Li ◽  
Ying Xu ◽  
Jianguo Lin ◽  
...  

The enhancement of the thermoelectric properties of stannite-type Cu2ZnSnSe4 under biaxial strain can be ascribed to band convergence of the valence bands near the Fermi level.


2015 ◽  
Vol 3 (40) ◽  
pp. 10409-10414 ◽  
Author(s):  
Elisabeth Rausch ◽  
Benjamin Balke ◽  
Jana Marie Stahlhofen ◽  
Siham Ouardi ◽  
Ulrich Burkhardt ◽  
...  

An efficiently designed microstructure leads to a record ZT value in p-type half-Heusler compounds.


2015 ◽  
Vol 8 (1) ◽  
pp. 216-220 ◽  
Author(s):  
Chenguang Fu ◽  
Tiejun Zhu ◽  
Yintu Liu ◽  
Hanhui Xie ◽  
Xinbing Zhao

High performance p-type half-Heusler compounds FeNb1−xTixSb are developed via a band engineering approach and a record zT of 1.1 is achieved.


2014 ◽  
Vol 4 (18) ◽  
pp. 1400600 ◽  
Author(s):  
Chenguang Fu ◽  
Tiejun Zhu ◽  
Yanzhong Pei ◽  
Hanhui Xie ◽  
Heng Wang ◽  
...  

2020 ◽  
Vol 8 (9) ◽  
pp. 3156-3164
Author(s):  
Nanhai Li ◽  
Huaxing Zhu ◽  
Wenlu He ◽  
Bing Zhang ◽  
Wenjun Cui ◽  
...  

The random distribution of Fe/Ni atoms in Fe1−xNixTiSb, which leads to low lattice thermal conductivity and thus high quality factors.


2016 ◽  
Vol 113 (29) ◽  
pp. E4125-E4132 ◽  
Author(s):  
Jing Shuai ◽  
Huiyuan Geng ◽  
Yucheng Lan ◽  
Zhuan Zhu ◽  
Chao Wang ◽  
...  

Complex Zintl phases, especially antimony (Sb)-based YbZn0.4Cd1.6Sb2 with figure-of-merit (ZT) of ∼1.2 at 700 K, are good candidates as thermoelectric materials because of their intrinsic “electron–crystal, phonon–glass” nature. Here, we report the rarely studied p-type bismuth (Bi)-based Zintl phases (Ca,Yb,Eu)Mg2Bi2 with a record thermoelectric performance. Phase-pure EuMg2Bi2 is successfully prepared with suppressed bipolar effect to reach ZT ∼ 1. Further partial substitution of Eu by Ca and Yb enhanced ZT to ∼1.3 for Eu0.2Yb0.2Ca0.6Mg2Bi2 at 873 K. Density-functional theory (DFT) simulation indicates the alloying has no effect on the valence band, but does affect the conduction band. Such band engineering results in good p-type thermoelectric properties with high carrier mobility. Using transmission electron microscopy, various types of strains are observed and are believed to be due to atomic mass and size fluctuations. Point defects, strain, dislocations, and nanostructures jointly contribute to phonon scattering, confirmed by the semiclassical theoretical calculations based on a modified Debye–Callaway model of lattice thermal conductivity. This work indicates Bi-based (Ca,Yb,Eu)Mg2Bi2 is better than the Sb-based Zintl phases.


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