Enhanced Raman Scattering of Rhodamine 6G Films on Two-Dimensional Transition Metal Dichalcogenides Correlated to Photoinduced Charge Transfer

2015 ◽  
Vol 28 (1) ◽  
pp. 180-187 ◽  
Author(s):  
Youngbin Lee ◽  
Hyunmin Kim ◽  
Jinhwan Lee ◽  
Seong Hun Yu ◽  
Euyheon Hwang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Transition Metal ◽  
Raman Scattering ◽  
Rhodamine 6G ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Photoinduced Charge Transfer ◽  
Metal Dichalcogenides ◽  
Enhanced Raman Scattering ◽  
Photoinduced Charge

scholarly journals Photoinduced charge transfer in transition metal dichalcogenide heterojunctions – towards next generation energy technologies

2020 ◽  
Vol 13 (9) ◽  
pp. 2684-2740 ◽  
Author(s):  
Dana B. Sulas-Kern ◽  
Elisa M. Miller ◽  
Jeffrey L. Blackburn
Keyword(s):  
Charge Transfer ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Transition Metal Dichalcogenide ◽  
Photoinduced Charge Transfer ◽  
Energy Applications ◽  
Energy Technologies ◽  
Broad Array ◽  
Metal Dichalcogenides ◽  
Photoinduced Charge

We review recent strides in understanding and manipulating photoinduced charge transfer in heterojunctions between 2D transition metal dichalcogenides and other semiconductors, with implications for a broad array of energy applications.

Origin of layer-dependent SERS tunability in 2D transition metal dichalcogenides

2021 ◽  
Author(s):  
Mingze Li ◽  
Yimeng Gao ◽  
Xingce Fan ◽  
Yunjia Wei ◽  
Qi Hao ◽  
...  
Keyword(s):  
Transition Metal ◽  
Noble Metals ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
2D Semiconductors ◽  
Surface Enhanced ◽  
The Matrix ◽  
Surface Enhanced Raman ◽  
Metal Dichalcogenides ◽  
Enhanced Raman Scattering

Two-dimensional (2D) semiconductors are expected to replace noble metals to become the matrix materials of next generation of commercial surface-enhanced Raman scattering (SERS) chips. Herein, we systematically studied the influence...

scholarly journals Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Fábio Ferreira ◽  
Vladimir V. Enaldiev ◽  
Vladimir I. Fal’ko ◽  
Samuel J. Magorrian
Keyword(s):  
Charge Transfer ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Potential Difference ◽  
Inversion Symmetry ◽  
Two Dimensional ◽  
2D Semiconductors ◽  
Metal Dichalcogenides

AbstractIn bilayers of two-dimensional semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs)—in particular, $$\hbox {WSe}_2$$ WSe 2 —for which we find a substantial stacking-dependent charge transfer, and InSe, for which the charge transfer is found to be negligibly small. The information obtained about TMDs is then used to map potentials generated by the interlayer charge transfer across the moiré superlattice in twistronic bilayers.

Observation of Robust Charge Transfer under Strain Engineering in Two-Dimensional MoS2-WSe2 Heterostructures

Nanoscale ◽  
2021 ◽  
Author(s):  
Shuwen Zheng ◽  
Hai-yu Wang ◽  
Lei Wang ◽  
Yang Luo ◽  
Bing-Rong Gao ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Steady State ◽  
Transition Metal ◽  
Band Structure ◽  
Transition Metal Dichalcogenides ◽  
Strain Engineering ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Strain is one of the effective ways to modulate the band structure of monolayer transition metal dichalcogenides (TMDCs), which has been reported by theoretical and steady-state spectroscopic researches. However, the...

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