Observation of Robust Charge Transfer under Strain Engineering in Two-Dimensional MoS2-WSe2 Heterostructures

Nanoscale ◽  
2021 ◽  
Author(s):  
Shuwen Zheng ◽  
Hai-yu Wang ◽  
Lei Wang ◽  
Yang Luo ◽  
Bing-Rong Gao ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Steady State ◽  
Transition Metal ◽  
Band Structure ◽  
Transition Metal Dichalcogenides ◽  
Strain Engineering ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Strain is one of the effective ways to modulate the band structure of monolayer transition metal dichalcogenides (TMDCs), which has been reported by theoretical and steady-state spectroscopic researches. However, the...

scholarly journals Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

RSC Advances ◽  
2020 ◽  
Vol 10 (65) ◽  
pp. 39455-39467
Author(s):  
Yalan Yan ◽  
Shuang Ding ◽  
Xiaonan Wu ◽  
Jian Zhu ◽  
Dengman Feng ◽  
...  
Keyword(s):  
Transition Metal ◽  
Physical Properties ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Strain Engineering ◽  
Two Dimensional ◽  
Photoelectric Properties ◽  
Metal Dichalcogenides

Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties.

scholarly journals Band structure and giant Stark effect in two-dimensional transition-metal dichalcogenides

2018 ◽  
Vol 1 (1) ◽  
pp. 015005 ◽  
Author(s):  
M Javaid ◽  
Salvy P Russo ◽  
K Kalantar-Zadeh ◽  
Andrew D Greentree ◽  
Daniel W Drumm
Keyword(s):  
Transition Metal ◽  
Band Structure ◽  
Stark Effect ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Metal Dichalcogenides

scholarly journals Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Fábio Ferreira ◽  
Vladimir V. Enaldiev ◽  
Vladimir I. Fal’ko ◽  
Samuel J. Magorrian
Keyword(s):  
Charge Transfer ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Potential Difference ◽  
Inversion Symmetry ◽  
Two Dimensional ◽  
2D Semiconductors ◽  
Metal Dichalcogenides

AbstractIn bilayers of two-dimensional semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs)—in particular, $$\hbox {WSe}_2$$ WSe 2 —for which we find a substantial stacking-dependent charge transfer, and InSe, for which the charge transfer is found to be negligibly small. The information obtained about TMDs is then used to map potentials generated by the interlayer charge transfer across the moiré superlattice in twistronic bilayers.

Strain engineering the properties of graphene and other two-dimensional crystals

2014 ◽  
Vol 16 (23) ◽  
pp. 11124-11138 ◽  
Author(s):  
Mark A. Bissett ◽  
Masaharu Tsuji ◽  
Hiroki Ago
Keyword(s):  
Transition Metal ◽  
Thin Layer ◽  
Transition Metal Dichalcogenides ◽  
Strain Engineering ◽  
Two Dimensional ◽  
Recent Advances ◽  
Metal Dichalcogenides

This perspective discusses recent advances in using strain to engineer the properties of thin-layer materials such as graphene and transition metal dichalcogenides (TMDs).

Mechanisms and Applications of Steady-State Photoluminescence Spectroscopy in Two-Dimensional Transition-Metal Dichalcogenides

ACS Nano ◽  
2020 ◽  
Vol 14 (11) ◽  
pp. 14579-14604 ◽  
Author(s):  
Mike Tebyetekerwa ◽  
Jian Zhang ◽  
Zhen Xu ◽  
Thien N. Truong ◽  
Zongyou Yin ◽  
...  
Keyword(s):  
Steady State ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Photoluminescence Spectroscopy ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Defects-related Dynamics of Photoexcited Carriers in 2D Transition Metal Dichalcogenides

2021 ◽  
Author(s):  
Lei Gao ◽  
Zhenliang Hu ◽  
Junpeng Lu ◽  
Hongwei Liu ◽  
Zhenhua Ni
Keyword(s):  
Transition Metal ◽  
Band Structure ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Properties ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit enormous potential in the field of optoelectronics because of their attractive optoelectronic properties, such as strong excitonic emissions, spin splited band structure, palpable...

Straining effects in MoS2 monolayer on nanostructured substrates: temperature-dependent photoluminescence and exciton dynamics

Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5717-5724 ◽  
Author(s):  
Yaowu Hu ◽  
Feng Zhang ◽  
Michael Titze ◽  
Biwei Deng ◽  
Hebin Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Strain Engineering ◽  
Two Dimensional ◽  
Temperature Dependent ◽  
Exciton Dynamics ◽  
Mos2 Monolayer ◽  
Metal Dichalcogenides ◽  
Temperature Dependent Photoluminescence

Strain-engineering of two-dimensional (2D) transition metal dichalcogenides (TMDs) has great potential to alter their electronic and optical properties.

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