Electronic Band Structure Engineering and Enhanced Thermoelectric Transport Properties in Pb-Doped BiCuOS Oxysulfide

2018 ◽  
Vol 30 (3) ◽  
pp. 1085-1094 ◽  
Author(s):  
Jean-Baptiste Labégorre ◽  
Rabih Al Rahal Al Orabi ◽  
Agathe Virfeu ◽  
Jacinthe Gamon ◽  
Philippe Barboux ◽  
...  
2019 ◽  
Vol 58 (9) ◽  
pp. 5533-5542 ◽  
Author(s):  
Patrick Gougeon ◽  
Philippe Gall ◽  
Rabih Al Rahal Al Orabi ◽  
Benoit Boucher ◽  
Bruno Fontaine ◽  
...  

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.


Nanoscale ◽  
2019 ◽  
Vol 11 (38) ◽  
pp. 17894-17903 ◽  
Author(s):  
G. H. Silvestre ◽  
Wanderlã L. Scopel ◽  
R. H. Miwa

(Left) Localization of the electronic states near the Fermi level, and the electronic band structure projected on the S1 and S2 stripes. (Right) Transmission probabilites parallel (y) and perpendicular (x) to the S1/S2 borophene superlattice.


Author(s):  
Hua Li ◽  
Gang Li

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.


2020 ◽  
Vol 185 ◽  
pp. 76-81
Author(s):  
Yongxin Qin ◽  
Dongyang Wang ◽  
Zhenghao Hou ◽  
Yu Xiao ◽  
Guangtao Wang ◽  
...  

2015 ◽  
Vol 44 (16) ◽  
pp. 7524-7537 ◽  
Author(s):  
U. Aydemir ◽  
C. Candolfi ◽  
A. Ormeci ◽  
M. Baitinger ◽  
U. Burkhardt ◽  
...  

This work reports a comprehensive study of the low-temperature transport properties of the type-I clathrates Ba8NixGe46−x−y□y in the homogeneity range (0 ≤ x ≤ 4.1).


Sign in / Sign up

Export Citation Format

Share Document