Control of Grain Boundary Depletion Layer and Capacitance in ZnO Thin Film by a Gate with Electric Double Layer Dielectric

2015 ◽  
Vol 119 (49) ◽  
pp. 27813-27820 ◽  
Author(s):  
Ravindra Singh Bisht ◽  
Rishi Ram Ghimire ◽  
A. K. Raychaudhuri
2022 ◽  
Vol 43 (01) ◽  
pp. 129-136
Author(s):  
Cong WANG ◽  
◽  
Yu-rong LIU ◽  
Qiang PENG ◽  
He HUANG ◽  
...  

RSC Advances ◽  
2021 ◽  
Vol 11 (29) ◽  
pp. 17910-17913
Author(s):  
Liuhui Lei ◽  
Yuanyuan Tan ◽  
Xing Yuan ◽  
Wei Dou ◽  
Jiale Zhang ◽  
...  

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature.


2011 ◽  
Vol 20 (5) ◽  
pp. 057201 ◽  
Author(s):  
An Zhang ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ming Liu ◽  
Jian-Lin Zhao

Nanoscale ◽  
2018 ◽  
Vol 10 (31) ◽  
pp. 14893-14901 ◽  
Author(s):  
Wennan Hu ◽  
Jie Jiang ◽  
Dingdong Xie ◽  
Shitan Wang ◽  
Kaixi Bi ◽  
...  

Physically transient neuromorphic electronic devices are proposed using an AZO electric-double-layer thin-film transistor self-supported on biodegradable sodium alginate membranes.


RSC Advances ◽  
2020 ◽  
Vol 10 (14) ◽  
pp. 8093-8096
Author(s):  
Wei Dou ◽  
Yuanyuan Tan

Dual gate (DG) low-voltage transparent electric-double-layer (EDL) thin-film transistors (TFTs) with microporous-SiO2 for both top and bottom dielectrics have been fabricated, both dielectrics were deposited by plasma-enhanced chemical vapor deposition (PECVD).


2014 ◽  
Vol 35 (4) ◽  
pp. 482-484 ◽  
Author(s):  
Ning Liu ◽  
Yanghui Liu ◽  
Liqiang Zhu ◽  
Yi Shi ◽  
Qing Wan

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