H-Type-like Aggregation-Accelerated Singlet Fission Process in Dipyrrolonaphthyridinedione Thin Film: The Role of Charge Transfer/Excimer Mixed Intermediate State

Author(s):  
Long Wang ◽  
Wanlin Cai ◽  
Jing Sun ◽  
Yuling Wu ◽  
Bin Zhang ◽  
...  
2021 ◽  
Vol 12 (39) ◽  
pp. 12928-12938
Author(s):  
Rajat Walia ◽  
Zexiang Deng ◽  
Jun Yang

Singlet fission in pentacene necessitates the vibronic progression of weak and strong charge-transfer states with correlated triplet pairs.


2014 ◽  
Vol 118 (26) ◽  
pp. 14192-14199 ◽  
Author(s):  
Fatemeh Mirjani ◽  
Nicolas Renaud ◽  
Natalie Gorczak ◽  
Ferdinand C. Grozema

2017 ◽  
Vol 8 (22) ◽  
pp. 5609-5615 ◽  
Author(s):  
Long Wang ◽  
Yishi Wu ◽  
Jianwei Chen ◽  
Lanfen Wang ◽  
Yanping Liu ◽  
...  

Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


Author(s):  
Weidong Qiu ◽  
Xinyi Cai ◽  
Mengke Li ◽  
Liangying Wang ◽  
Yanmei He ◽  
...  

Dynamic adjustment of emission behaviours by controlling the extent of twisted intramolecular charge transfer character in excited state.


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