Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor

Langmuir ◽  
2017 ◽  
Vol 33 (47) ◽  
pp. 13554-13560 ◽  
Author(s):  
Seohyun Mun ◽  
Yoonkyung Park ◽  
Yong-Eun Koo Lee ◽  
Myung Mo Sung
Keyword(s):  
Single Crystal ◽  
Gas Sensor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Ammonia Gas ◽  
Highly Sensitive ◽  
Effect Transistor

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Active Materials ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.

scholarly journals A highly selective electron affinity facilitated H2S sensor: the marriage of tris(keto-hydrazone) and an organic field-effect transistor

2021 ◽  
Author(s):  
Saravanan Yuvaraja ◽  
Veerabhadraswamy Nagarajappa Bhyranalyar ◽  
Sachin Ashok Bhat ◽  
Sandeep Goud Surya ◽  
Channabasaveshwar Veerappa Yelamaggad ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Electron Affinity ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Preventive Measures ◽  
Organic Field Effect Transistor ◽  
Toxic Gases ◽  
Channel Resistance ◽  
Effect Transistor

The proposed H2S gas sensor is a novel heterojunction combination that can readily absorb toxic gases, changing the channel resistance of the device. The OFET device is a highly stable and selective tool that can help in taking preventive measures.

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