An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.

2016 ◽  
Vol 52 (12) ◽  
pp. 2647-2647
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  

Correction for ‘An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1’ by Jian Deng et al., Chem. Commun., 2016, DOI: 10.1039/c5cc09702a.


2019 ◽  
Vol 6 (11) ◽  
pp. 3345-3349
Author(s):  
Chiming Wang ◽  
Dongdong Qi ◽  
Guang Lu ◽  
Hailong Wang ◽  
Yanli Chen ◽  
...  

Organic field effect transistor (OFET) devices fabricated based on mixed-(phthalocyaninato)(porphyrinato) yttrium(iii) and fullerene cocrystals represent one of the most excellent cocrystal ambipolar OFET devices reported thus far.


2007 ◽  
Vol 157 (10-12) ◽  
pp. 481-484 ◽  
Author(s):  
Kihyun Kim ◽  
Min Ki Kim ◽  
Han Saem Kang ◽  
Mi Yeon Cho ◽  
Jinsoo Joo ◽  
...  

2007 ◽  
Vol 19 (26) ◽  
pp. 6382-6384 ◽  
Author(s):  
Yukihiro Takahashi ◽  
Tatsuo Hasegawa ◽  
Sachio Horiuchi ◽  
Reiji Kumai ◽  
Yoshinori Tokura ◽  
...  

2013 ◽  
Vol 52 (5S1) ◽  
pp. 05DC10 ◽  
Author(s):  
Katsumasa Nakahara ◽  
Chikahiko Mitsui ◽  
Toshihiro Okamoto ◽  
Masakazu Yamagishi ◽  
Junshi Soeda ◽  
...  

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