An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1
Keyword(s):
Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.
2016 ◽
Vol 37
(12)
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pp. 1632-1635
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2014 ◽
Vol 37
(1)
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pp. 95-99
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2007 ◽
Vol 157
(10-12)
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pp. 481-484
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2013 ◽
Vol 52
(5S1)
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pp. 05DC10
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