Black Phosphorus Mid-Infrared Light-Emitting Diodes Integrated with Silicon Photonic Waveguides

Nano Letters ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 6824-6830 ◽  
Author(s):  
Tian-Yun Chang ◽  
Yueyang Chen ◽  
De-In Luo ◽  
Jia-Xin Li ◽  
Po-Liang Chen ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Black Phosphorus ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting ◽  
Silicon Photonic ◽  
Photonic Waveguides

Room temperature thermo-electric pumping in mid-infrared light-emitting diodes

2013 ◽  
Vol 103 (18) ◽  
pp. 183513 ◽  
Author(s):  
Parthiban Santhanam ◽  
Duanni Huang ◽  
Rajeev J. Ram ◽  
Maxim A. Remennyi ◽  
Boris A. Matveev
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Thermo Electric ◽  
Mid Infrared ◽  
Light Emitting

Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy

2007 ◽  
Author(s):  
V. M. Smirnov ◽  
P. J. Batty ◽  
A. Krier ◽  
R. Jones ◽  
V. I. Vasil'ev ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting

Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes

2010 ◽  
Vol 96 (19) ◽  
pp. 191102 ◽  
Author(s):  
Seungyong Jung ◽  
Sergey Suchalkin ◽  
Gela Kipshidze ◽  
David Westerfeld ◽  
Eric Golden ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Dual Wavelength ◽  
Infrared Light ◽  
Type I ◽  
Mid Infrared ◽  
Light Emitting

Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08Heterostructures

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5039-5043 ◽  
Author(s):  
Xiu Ying Gong ◽  
Hirofumi Kan ◽  
Takamitsu Makino ◽  
Takefumi Iida ◽  
Kenzo Watanabe ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting ◽  
Liquid Phase Epitaxial

scholarly journals Widely tunable mid-infrared light emission in thin-film black phosphorus

2020 ◽  
Vol 6 (7) ◽  
pp. eaay6134 ◽  
Author(s):  
Chen Chen ◽  
Xiaobo Lu ◽  
Bingchen Deng ◽  
Xiaolong Chen ◽  
Qiushi Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Radiative Decay ◽  
Light Emission ◽  
Hexagonal Boron Nitride ◽  
Bias Field ◽  
Black Phosphorus ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting ◽  
Decay Channels

Thin-film black phosphorus (BP) is an attractive material for mid-infrared optoelectronic applications because of its layered nature and a moderate bandgap of around 300 meV. Previous photoconduction demonstrations show that a vertical electric field can effectively reduce the bandgap of thin-film BP, expanding the device operational wavelength range in mid-infrared. Here, we report the widely tunable mid-infrared light emission from a hexagonal boron nitride (hBN)/BP/hBN heterostructure device. With a moderate displacement field up to 0.48 V/nm, the photoluminescence (PL) peak from a ~20-layer BP flake is continuously tuned from 3.7 to 7.7 μm, spanning 4 μm in mid-infrared. The PL emission remains perfectly linear-polarized along the armchair direction regardless of the bias field. Moreover, together with theoretical analysis, we show that the radiative decay probably dominates over other nonradiative decay channels in the PL experiments. Our results reveal the great potential of thin-film BP in future widely tunable, mid-infrared light-emitting and lasing applications.

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