scholarly journals Narrow Excitonic Lines and Large-Scale Homogeneity of Transition-Metal Dichalcogenide Monolayers Grown by Molecular Beam Epitaxy on Hexagonal Boron Nitride

Nano Letters ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 3058-3066 ◽  
Author(s):  
Wojciech Pacuski ◽  
Magdalena Grzeszczyk ◽  
Karol Nogajewski ◽  
Aleksander Bogucki ◽  
Kacper Oreszczuk ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transition Metal ◽  
Boron Nitride ◽  
Large Scale ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Transition Metal Dichalcogenide

scholarly journals Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy

2018 ◽  
Vol 26 (18) ◽  
pp. 23031 ◽  
Author(s):  
David Arto Laleyan ◽  
Kelsey Mengle ◽  
Songrui Zhao ◽  
Yongjie Wang ◽  
Emmanouil Kioupakis ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Structural And Optical Properties

scholarly journals Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Yong-Jin Cho ◽  
Alex Summerfield ◽  
Andrew Davies ◽  
Tin S. Cheng ◽  
Emily F. Smith ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Graphite Substrate ◽  
Force Microscopy ◽  
Atomic Force

Abstract We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.

scholarly journals High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes

Materials ◽  
2018 ◽  
Vol 11 (7) ◽  
pp. 1119 ◽  
Author(s):  
Tin Cheng ◽  
Alex Summerfield ◽  
Christopher Mellor ◽  
Andrei Khlobystov ◽  
Laurence Eaves ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Active Nitrogen ◽  
Nitrogen Fluxes

scholarly journals Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

2015 ◽  
Vol 106 (21) ◽  
pp. 213108 ◽  
Author(s):  
S. Nakhaie ◽  
J. M. Wofford ◽  
T. Schumann ◽  
U. Jahn ◽  
M. Ramsteiner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Boron Nitride Films

scholarly journals Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 021023 ◽  
Author(s):  
T Q P Vuong ◽  
G Cassabois ◽  
P Valvin ◽  
E Rousseau ◽  
A Summerfield ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Ultraviolet Emission ◽  
Deep Ultraviolet ◽  
Deep Ultraviolet Emission

scholarly journals Erratum: Corrigendum: Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Yong-Jin Cho ◽  
Alex Summerfield ◽  
Andrew Davies ◽  
Tin S. Cheng ◽  
Emily F. Smith ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Tunnel Barriers

Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 109 (4) ◽  
pp. 043110 ◽  
Author(s):  
Zhongguang Xu ◽  
Alireza Khanaki ◽  
Hao Tian ◽  
Renjing Zheng ◽  
Mohammad Suja ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Direct Growth

A SCANNING TUNNELING MICROSCOPY STUDY OF MONOLAYER AND BILAYER TRANSITION-METAL DICHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY

2018 ◽  
Vol 25 (Supp01) ◽  
pp. 1841002
Author(s):  
MAOHAI XIE ◽  
JINGLEI CHEN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transition Metal ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Structural Phase ◽  
Transition Metal Dichalcogenides ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Transition Metal Dichalcogenide ◽  
Tunneling Microscopy

This review presents an account of some recent scanning tunneling microscopy and spectroscopy (STM/S) studies of monolayer and bilayer transition-metal dichalcogenide (TMD) films grown by molecular-beam epitaxy (MBE). In addition to some intrinsic properties revealed by STM/S, defects such as inversion domain boundaries and point defects, their properties and induced effects, are presented. More specifically, the quantum confinement and moiré potential effects, charge state transition, quasi-particle interference and structural phase transition as revealed by STM/S are described.

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