scholarly journals Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy

2018 ◽  
Vol 26 (18) ◽  
pp. 23031 ◽  
Author(s):  
David Arto Laleyan ◽  
Kelsey Mengle ◽  
Songrui Zhao ◽  
Yongjie Wang ◽  
Emmanouil Kioupakis ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Structural And Optical Properties

Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

2017 ◽  
Vol 51 (2) ◽  
pp. 267-271 ◽  
Author(s):  
N. V. Kryzhanovskaya ◽  
Yu. S. Polubavkina ◽  
V. N. Nevedomskiy ◽  
E. V. Nikitina ◽  
A. A. Lazarenko ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural And Optical Properties

scholarly journals Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Yong-Jin Cho ◽  
Alex Summerfield ◽  
Andrew Davies ◽  
Tin S. Cheng ◽  
Emily F. Smith ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Graphite Substrate ◽  
Force Microscopy ◽  
Atomic Force

Abstract We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.

Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy

1990 ◽  
Vol 41 (18) ◽  
pp. 12599-12606 ◽  
Author(s):  
O. Brandt ◽  
L. Tapfer ◽  
R. Cingolani ◽  
K. Ploog ◽  
M. Hohenstein ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Structural And Optical Properties

Structural and optical properties of indium nitride grown by plasma-assisted molecular beam epitaxy

2004 ◽  
Author(s):  
Phillip A. Anderson ◽  
Tse-En Daniel Lee ◽  
Chito E. Kendrick ◽  
Wolfgang Diehl ◽  
Robert J. Kinsey ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Indium Nitride ◽  
Structural And Optical Properties
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