Exfoliated Graphite Electrodes for Organic Single-Crystal Field-Effect Transistor Devices

2019 ◽  
Vol 1 (10) ◽  
pp. 2174-2183
Author(s):  
Jinho Lee ◽  
Hyeyeon Cho ◽  
Hee Cheul Choi
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Exfoliated Graphite ◽  
Graphite Electrodes ◽  
Crystal Field Effect ◽  
Organic Single Crystal ◽  
Effect Transistor

Flexible Organic Single-Crystal Field-Effect Transistor for Ultra-Sensitivity Strain Sensing

2017 ◽  
Vol 38 (11) ◽  
pp. 1598-1601 ◽  
Author(s):  
Haiting Wang ◽  
Liangliang Deng ◽  
Qingxin Tang ◽  
Yanhong Tong ◽  
Yichun Liu
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Strain Sensing ◽  
Crystal Field Effect ◽  
Organic Single Crystal ◽  
Effect Transistor

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator

2006 ◽  
Vol 89 (15) ◽  
pp. 152110 ◽  
Author(s):  
Nobuya Hiroshiba ◽  
Ryotaro Kumashiro ◽  
Katsumi Tanigaki ◽  
Taishi Takenobu ◽  
Yoshihiro Iwasa ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Crystal Field Effect ◽  
High K ◽  
Effect Transistor

Single Crystal Field Effect Transistor of a Y-Shaped Ladder-Type Oligomer

2008 ◽  
Vol 112 (21) ◽  
pp. 7968-7971 ◽  
Author(s):  
Phuong-T. T. Pham ◽  
Yu Xia ◽  
C. Daniel Frisbie ◽  
Mamoun M. Bader
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Crystal Field Effect ◽  
Effect Transistor
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