Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator

2006 ◽  
Vol 89 (15) ◽  
pp. 152110 ◽  
Author(s):  
Nobuya Hiroshiba ◽  
Ryotaro Kumashiro ◽  
Katsumi Tanigaki ◽  
Taishi Takenobu ◽  
Yoshihiro Iwasa ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Crystal Field Effect ◽  
High K ◽  
Effect Transistor

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

scholarly journals Self-Assemble Monolayer Dependent Field Effect Transistor’s Performance Based On Tetracene Single-Crystal

2013 ◽  
Vol 25 (2) ◽  
pp. 194-199 ◽  
Author(s):  
Md. Minarul Islam
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Chemical Society ◽  
Gate Insulator ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
Effect Transistor ◽  
Self Assemble Monolayer

Organic field effect transistors with an active layer based on the tetracene single-crystal were fabricated. It was found that organosilane self-assemble monolayer (SAM) modified device with tetracene single-crystals gave higher mobility and on/off ratio rather than untreated device. SAM modified tetracene single-crystal transistors with parylene gate insulator showed the highest mobility of 0.66 cm2 V-1 s-1 and high on/off ratio of ~104. This finding demonstrates that SAM treatment decrease the charge leakage between source and drain which help to decrease the off current with greater extent and increase the on current slightly of the tetracene single-crystal field-effect transistors. Journal of Bangladesh Chemical Society, Vol. 25(2), 194-199, 2012 DOI: http://dx.doi.org/10.3329/jbcs.v25i2.15086

Rubrene Single-crystal Organic Field Effect Transistor with Laser Ablated BaTiO3 Epitaxial Growth Thin-film as High-k Insulator

2006 ◽  
Vol 965 ◽  
Author(s):  
Nobuya Hiroshiba ◽  
Ryotaro Kumashiro ◽  
Taishi Takenobu ◽  
Naoya Komatsu ◽  
Yusuke Suto ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Dielectric Constant ◽  
Gate Insulator ◽  
High K ◽  
High Carrier ◽  
Effect Transistor ◽  
High Dielectric

ABSTRACTHigh quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

Single Crystal Field Effect Transistor of a Y-Shaped Ladder-Type Oligomer

2008 ◽  
Vol 112 (21) ◽  
pp. 7968-7971 ◽  
Author(s):  
Phuong-T. T. Pham ◽  
Yu Xia ◽  
C. Daniel Frisbie ◽  
Mamoun M. Bader
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Crystal Field Effect ◽  
Effect Transistor
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