Low-Voltage Organic Single-Crystal Field-Effect Transistor with Steep Subthreshold Slope

2018 ◽  
Vol 10 (31) ◽  
pp. 25871-25877 ◽  
Author(s):  
Fangxu Yang ◽  
Lingjie Sun ◽  
Jiangli Han ◽  
Baili Li ◽  
Xi Yu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Voltage ◽  
Subthreshold Slope ◽  
Crystal Field Effect ◽  
Organic Single Crystal ◽  
Effect Transistor ◽  
Steep Subthreshold Slope

Flexible Organic Single-Crystal Field-Effect Transistor for Ultra-Sensitivity Strain Sensing

2017 ◽  
Vol 38 (11) ◽  
pp. 1598-1601 ◽  
Author(s):  
Haiting Wang ◽  
Liangliang Deng ◽  
Qingxin Tang ◽  
Yanhong Tong ◽  
Yichun Liu
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Strain Sensing ◽  
Crystal Field Effect ◽  
Organic Single Crystal ◽  
Effect Transistor

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

Isotropic transport in an oligothiophene derivative for single-crystal field-effect transistor applications

2009 ◽  
Vol 94 (20) ◽  
pp. 202101 ◽  
Author(s):  
Colin Reese ◽  
Mark E. Roberts ◽  
Sean R. Parkin ◽  
Zhenan Bao
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Crystal Field Effect ◽  
Effect Transistor

Free-standing tetracene single crystal field effect transistor

2003 ◽  
Vol 128 (11) ◽  
pp. 431-434 ◽  
Author(s):  
V.Y. Butko ◽  
X. Chi ◽  
A.P. Ramirez
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Free Standing ◽  
Crystal Field Effect ◽  
Effect Transistor

Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator

2006 ◽  
Vol 89 (15) ◽  
pp. 152110 ◽  
Author(s):  
Nobuya Hiroshiba ◽  
Ryotaro Kumashiro ◽  
Katsumi Tanigaki ◽  
Taishi Takenobu ◽  
Yoshihiro Iwasa ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Crystal Field Effect ◽  
High K ◽  
Effect Transistor

Single Crystal Field Effect Transistor of a Y-Shaped Ladder-Type Oligomer

2008 ◽  
Vol 112 (21) ◽  
pp. 7968-7971 ◽  
Author(s):  
Phuong-T. T. Pham ◽  
Yu Xia ◽  
C. Daniel Frisbie ◽  
Mamoun M. Bader
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Crystal Field Effect ◽  
Effect Transistor
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