Thermoelectric Property of n-Type Bismuth-Doped SnSe Film: Influence of Characteristic Film Defect

Author(s):  
Tomoya Horide ◽  
Keima Nakamura ◽  
Yoshiki Hirayama ◽  
Kazuki Morishita ◽  
Manabu Ishimaru ◽  
...  
Author(s):  
Qi Chen ◽  
W. D. Griffiths

AbstractIn this work, Mo was added into Al melt to reduce the detrimental effect of double-oxide film defect. An air bubble was trapped in a liquid metal (2L99), served as an analogy for double-oxide film defect in aluminum alloy castings. It was found that the addition of Mo significantly accelerated the consumption of the entrapped bubble by 60 pct after holding for 1 hour. 2 sets of testbar molds were then cast, with 2L99 and 2L99+Mo alloy, with a badly designed running system, intended to deliberately introduce double oxide film defects into the liquid metal. Tensile testing showed that, with the addition of Mo, the Weibull modulus of the Ultimate Tensile Strength and pct Elongation was increased by a factor of 2.5 (from 9 to 23) and 2 (from 2.5 to 4.5), respectively. The fracture surface of 2L99+Mo alloy testbars revealed areas of nitrides contained within bi-film defects. Cross-sections through those defects by Focused Ion Beam milling suggested that the surface layer were permeable, which could be as thick as 30 μm, compared to around 500 nm for the typical oxide film thickness. Transmission Electron Microscopy analysis suggested that the nitride-containing layer consisted of nitride particles as well as spinel phase of various form. The hypothesis was raised that the permeability of the nitride layers promote the reaction between the entrapped atmosphere in the defect and the surrounding liquid metal, reducing the defect size and decreasing their impact on mechanical properties.


2013 ◽  
Vol 3 (9) ◽  
pp. 1195-1200 ◽  
Author(s):  
Xiao Yan ◽  
Weishu Liu ◽  
Shuo Chen ◽  
Hui Wang ◽  
Qian Zhang ◽  
...  

2013 ◽  
Vol 652-654 ◽  
pp. 554-558
Author(s):  
Xin Min Min ◽  
Xuchao Wang

The relations between electronic structure and thermoelectric property of misfit layered cobaltite of Ca3Co4O9 and La-doped series are studied from the calculation by density function and discrete variation method (DFT-DVM). The highest valence band (HVB) and the lowest conduction band (LCB) near Fermi level are only mainly from O 2p and Co 3d in Ca2CoO3 layer. Therefore, the semiconductor, or thermoelectric property of Ca3Co4O9 should be mainly from Ca2CoO3 layer, but have no direct relation to the CoO2 layer, which is consistent with that binary oxides hardly have thermoelectric property, but trinary oxide compounds have quite good thermoelectric property. With the amount of La-doped increase, the gap between HVB and LCB firstly decrease, then reaches the minimum, finally increase. The gap affects the thermoelectric property. Therefore, there is a best amount of Na-doped to improve thermoelectric property, which is consistent with the experiment.


2009 ◽  
Vol 118 (1) ◽  
pp. 165-173 ◽  
Author(s):  
Ravinder Madhavaram ◽  
Jonathan Sander ◽  
Yong X. Gan ◽  
Cyril K. Masiulaniec

2015 ◽  
Vol 27 (22) ◽  
pp. 7719-7728 ◽  
Author(s):  
Priyanka Jood ◽  
Michihiro Ohta ◽  
Oleg I. Lebedev ◽  
David Berthebaud

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