Role of Oxygen Vacancy Ordering and Channel Formation in Tuning Intercalation Pseudocapacitance in Mo Single-Ion-Implanted CeO2–x Nanoflakes

2021 ◽  
Author(s):  
Xiaoran Zheng ◽  
Sajjad S. Mofarah ◽  
Alan Cen ◽  
Claudio Cazorla ◽  
Enamul Haque ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Channel Formation ◽  
Vacancy Ordering ◽  
Ion Implanted

Oxygen vacancy ordering in CaTiO3–CaFeO2.5 perovskites: From isolated defects to infinite sheets

1999 ◽  
Vol 69 (1) ◽  
pp. 133-146 ◽  
Author(s):  
A. I. Becerro ◽  
C. McCammon ◽  
F. Langenhorst ◽  
F. Seifert ◽  
R. Angel
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Ordering

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

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