Synergistic role of electron-trapped oxygen vacancy and exposed TiO2 [0 0 1] facets toward electrochemical p-nitrophenol reduction: Characterization, performance and mechanism

2021 ◽  
Vol 411 ◽  
pp. 128485 ◽  
Author(s):  
Congcong Ni ◽  
Yifan Li ◽  
Xianzhe Meng ◽  
Shuliang Liu ◽  
Siyi Luo ◽  
...  
2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.


2021 ◽  
Vol 79 ◽  
pp. 123-132
Author(s):  
Yixuan Lv ◽  
Yijun Zhang ◽  
Le Shi ◽  
Jian-Wen Shi ◽  
Jun Li ◽  
...  

2006 ◽  
Vol 88 (24) ◽  
pp. 243110 ◽  
Author(s):  
Swanand Patil ◽  
Sudipta Seal ◽  
Yu Guo ◽  
Alfons Schulte ◽  
John Norwood

2016 ◽  
Vol 285 ◽  
pp. 209-214 ◽  
Author(s):  
Shinya Sugiura ◽  
Yasushi Shibuta ◽  
Kohei Shimamura ◽  
Masaaki Misawa ◽  
Fuyuki Shimojo ◽  
...  

2011 ◽  
Vol 80 (11) ◽  
pp. 114706 ◽  
Author(s):  
Shi Wei Chen ◽  
Jenn Min Lee ◽  
Sunny Chiang ◽  
Shu Chih Haw ◽  
Yu Chia Liang ◽  
...  

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