Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

Defects Introduced by Low Dose Be-Implantation Probed by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Positron Annihilation ◽  
Low Dose ◽  
Positron Beam ◽  
Doppler Broadening ◽  
Positron Energy ◽  
P Type ◽  
Incident Positron ◽  
Depth Distributions

ABSTRACTVacancy-type defects in 60-keV Be+-implanted GaAs and InP were studied by a monoenergetic positron beam. The depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. Vacancy-type defects introduced by ion implantation were observed in n-type GaAs. For p-type GaAs, however, this was not the case. This can be attributed to the recombination of vacancy-type defects and pre-existed interstitial-type defects in p-type GaAs. The defects induced by ion implantation in InP were also studied.

The Lack of Trapping Centers for Positrons at the Interface of W/Si System and the Investigation of the Depletion Layer in the Schottky Barrier by Positrons as Test Charge Simulating Holes

1992 ◽  
Vol 262 ◽  
Author(s):  
S. Tanigawa ◽  
Y. Tabuki ◽  
L. Wei ◽  
K. Hinode ◽  
N. Kobayashi ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Positron Beam ◽  
Interfacial Phenomena ◽  
Doppler Broadening ◽  
Dc Magnetron Sputtering ◽  
Positron Energy ◽  
Test Charge ◽  
P Type ◽  
Incident Positron

ABSTRACTInterfacial phenomena in the W-Si systems were studied by a monoenergetic positron beam. Doppler broadening profiles of the positron annihilation were measured as a function of incident positron energy. Tungsten thin films of 100 nm in thickness were deposited on p-type, 10 »cm Cz-grown Si wafers with (100) orientation by the DC magnetron sputtering method. Specimens were annealed at various temperatures in order to form suicides. It was found that the position of the interface of both W/Si and W silicide/Si is very different from the position expected from a simple situation neglecting the effect of electric field on the diffusion of positrons. This fact arouse the utility of positrons as a test charge to probe directly the electric field gradient in the Schottky barrier.

Exploration of vacancy defect formation and evolution in low-energy ion implanted pure titanium

2022 ◽  
Author(s):  
Xudong An ◽  
Hongqiang Zhang ◽  
Te Zhu ◽  
Qianqian Wang ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Defect Formation ◽  
Pure Titanium ◽  
Vacancy Defect ◽  
Low Energy ◽  
Formation And Evolution ◽  
Ion Implanted

Defect-induced magnetism in liquid sodium-exposed stainless steel as studied by Mössbauer and positron annihilation spectroscopic techniques

2017 ◽  
Vol 31 (06) ◽  
pp. 1750033 ◽  
Author(s):  
Alaka Panda ◽  
L. Herojit Singh ◽  
R. Govindaraj ◽  
S. Abhaya ◽  
R. Kumar Yadav ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Austenitic Stainless Steel ◽  
Positron Beam ◽  
Low Energy ◽  
Liquid Sodium ◽  
Spectroscopic Techniques ◽  
Doppler Broadening ◽  
Austenitic Matrix ◽  
Hyperfine Parameters ◽  
Partial Formation

Detailed Mössbauer studies carried out in liquid sodium (Na)-exposed austenitic stainless steel (SS-316) show that there is a partial formation of ferromagnetically (FM)-ordered ferritic zones in the paramagnetic austenitic matrix. Results of low energy positron beam-based Doppler broadening studies imply the occurrence of vacancy kind of defects in the liquid Na-exposed SS-316. Correlating these results, the partial occurrence of FM-ordered zones in the liquid Na-exposed SS-316 is understood to be due to open volume defects, predominantly that of Ni vacancies occurring at the surface and upto a certain depth of liquid Na-exposed stainless steel. These results are elucidated in terms of hyperfine parameters associated with ferritic zones.

Slow Positron Studies in Polymers

2010 ◽  
Vol 307 ◽  
pp. 85-92
Author(s):  
S.B. Shrivastava ◽  
Aman Deep Acharya ◽  
R. Sharma
Keyword(s):  
Positron Lifetime ◽  
Hole Concentration ◽  
Low Energy ◽  
Positronium Formation ◽  
Positron Energy ◽  
Slow Positron ◽  
Polymeric Surface ◽  
S Parameter ◽  
Free Volume Hole ◽  
Incident Positron

The diffusion trapping model has been applied to slow positron annihilation in He+ irradiated polystyrene and polystyrene – polystyrene bilayers. The S-parameter and the positron lifetime have been calculated as a function of the incident positron energy. The effect of the fluence upon the nature of the S-parameter curve has been discussed. It has been found that a change in fluence affects positronium formation. The transition rate for surface to positronium formation has been found to be dependent upon the fluence and the atomic number of the irradiated ion. The lifetime results show that, at low energy, the o-Ps annihilates mainly at the polymeric surface. The free volume hole concentration is found to decrease at low energy, and becomes constant at higher energies.

Study of Ion Implanted Copper Laser Mirrors by Spectroscopic Ellipsometry

1986 ◽  
Vol 74 ◽  
Author(s):  
P. G. Snyder ◽  
A. Massengale ◽  
K. Memarzadeh ◽  
J. A. Woollam ◽  
D. C. Ingram ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Implantation ◽  
Void Fraction ◽  
Spectroscopic Ellipsometry ◽  
Low Energy ◽  
Near Surface ◽  
Cu Ions ◽  
Microscopic Surface ◽  
Ion Implanted

AbstractImplantation with 400 keV Ag or Cu ions improves the near-surface microstructural quality and reflectance of diamond turned and mechanically polished flat copper laser mirrors. Spectroscopic ellipsometry is sensitive to changes in either the microscopic surface roughness, or in the nearsurface substrate void fraction, and both parameters are observed to change upon implantation. Substrate density as a function of ion fluence peaks at about 5 × 10 15cm-2. Low energy (300 eV) Ar ion implantation can cause either a reduction or increase in microscopic surface roughness, depending on fluence.

scholarly journals Vacancy type defect formation in irradiated α-iron investigated by positron beam Doppler broadening technique

2014 ◽  
Vol 505 ◽  
pp. 012018 ◽  
Author(s):  
C W He ◽  
K Dawi ◽  
C Platteau ◽  
M F Barthe ◽  
P Desgardin ◽  
...  
Keyword(s):  
Defect Formation ◽  
Positron Beam ◽  
Doppler Broadening ◽  
Type Defect ◽  
Vacancy Type Defect

X-ray microanalysis of ion-implantation profiles in backthinned specimens

1984 ◽  
Vol 42 ◽  
pp. 578-579
Author(s):  
J. Bentley ◽  
P. Angelini
Keyword(s):  
Ion Implantation ◽  
Penetration Depth ◽  
Low Energy ◽  
Concentration Profiles ◽  
X Ray ◽  
Ion Implanted

As an alternative to the use of cross-sectioned specimens, a method which uses backthinned specimens has been developed for the measurement of concentration profiles in ion-implanted materials. The technique is less direct but avoids the sometimes insurmountable problems associated with the preparation of suitable cross-sectioned specimens and is more applicable to low-energy implants where the penetration depth is small. A series of x-ray spectra is measured in a wedge-shaped, backthinned foil.

Defect Formation in LiF by Low Energy Ion Implantation

1985 ◽  
Vol 131 (1) ◽  
pp. 87-96 ◽  
Author(s):  
C. N. Afonso ◽  
C. Ortiz ◽  
G. J. Clark
Keyword(s):  
Ion Implantation ◽  
Defect Formation ◽  
Low Energy
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