scholarly journals Localization of Narrowband Single Photon Emitters in Nanodiamonds

2016 ◽  
Vol 8 (11) ◽  
pp. 7590-7594 ◽  
Author(s):  
Kerem Bray ◽  
Russell Sandstrom ◽  
Christopher Elbadawi ◽  
Martin Fischer ◽  
Matthias Schreck ◽  
...  
2021 ◽  
Vol 125 (6) ◽  
pp. 1325-1335 ◽  
Author(s):  
Cesar Jara ◽  
Tomáš Rauch ◽  
Silvana Botti ◽  
Miguel A. L. Marques ◽  
Ariel Norambuena ◽  
...  

Author(s):  
Yongzhou Xue ◽  
Tongbo Wei ◽  
Hongliang Chang ◽  
Dongdong Liang ◽  
Xiuming Dou ◽  
...  

Nanophotonics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 3557-3565
Author(s):  
Guorui Zhang ◽  
Ying Gu ◽  
Qihuang Gong ◽  
Jianjun Chen

AbstractDue to small optical mode volumes and linear polarizations of surface-plasmon-polariton (SPP) resonant modes in metallic antennas, it is very difficult to obtain complex emission patterns and polarizations for single-photon emitters. Herein, nonresonant enhancement in a silver nanowire is used to both enhance emission rates and extract a z-oriented dipole, and then the symmetry of metallic nanostructures is proposed to tailor the patterns and polarizations of single-photon emission. The emission pattern of a quantum dot located close to a metallic nanostructure with a symmetric axis is split into multiple flaps. The number of splitting flaps is equal to the order of the symmetric axis. Moreover, the electric vectors of the emitted photons become centrally symmetric about the symmetric axis. The above phenomena are well explained by both a simulation and an image dipole model. The structural-symmetry-tailoring mechanism may open up a new avenue in the design of multifunctional and novel quantum-plasmonic devices.


2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Shiyuan Gao ◽  
Hsiao-Yi Chen ◽  
Marco Bernardi

AbstractPoint defects in hexagonal boron nitride (hBN) have attracted growing attention as bright single-photon emitters. However, understanding of their atomic structure and radiative properties remains incomplete. Here we study the excited states and radiative lifetimes of over 20 native defects and carbon or oxygen impurities in hBN using ab initio density functional theory and GW plus Bethe-Salpeter equation calculations, generating a large data set of their emission energy, polarization and lifetime. We find a wide variability across quantum emitters, with exciton energies ranging from 0.3 to 4 eV and radiative lifetimes from ns to ms for different defect structures. Through a Bayesian statistical analysis, we identify various high-likelihood charge-neutral defect emitters, among which the native VNNB defect is predicted to possess emission energy and radiative lifetime in agreement with experiments. Our work advances the microscopic understanding of hBN single-photon emitters and introduces a computational framework to characterize and identify quantum emitters in 2D materials.


2021 ◽  
Vol 4 (10) ◽  
pp. 2100057
Author(s):  
Shailesh Kumar ◽  
Sergey I. Bozhevolnyi

2015 ◽  
Author(s):  
Snežana Lazić ◽  
Ekaterina Chernysheva ◽  
Žarko Gačević ◽  
Noemi García-Lepetit ◽  
Herko P. van der Meulen ◽  
...  

2009 ◽  
Vol 95 (18) ◽  
pp. 181109 ◽  
Author(s):  
B. Naydenov ◽  
R. Kolesov ◽  
A. Batalov ◽  
J. Meijer ◽  
S. Pezzagna ◽  
...  

2013 ◽  
Vol 378 ◽  
pp. 519-523 ◽  
Author(s):  
Jean-Christophe Harmand ◽  
Fauzia Jabeen ◽  
Linsheng Liu ◽  
Gilles Patriarche ◽  
Karine Gauthron ◽  
...  

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Ali Deniz Özdemir ◽  
Pramit Barua ◽  
Felix Pyatkov ◽  
Frank Hennrich ◽  
Yuan Chen ◽  
...  

AbstractAll-carbon field-effect transistors, which combine carbon nanotubes and graphene hold great promise for many applications such as digital logic devices and single-photon emitters. However, the understanding of the physical properties of carbon nanotube (CNT)/graphene hybrid systems in such devices remained limited. In this combined experimental and theoretical study, we use a quantum transport model for field-effect transistors based on graphene electrodes and CNT channels to explain the experimentally observed low on currents. We find that large graphene/CNT spacing and short contact lengths limit the device performance. We have also elucidated in this work the experimentally observed ambipolar transport behavior caused by the flat conduction- and valence-bands and describe non-ideal gate-control of the contacts and channel region by the quantum capacitance of graphene and the carbon nanotube. We hope that our insights will accelerate the design of efficient all-carbon field-effect transistors.


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