Symmetry-tailored patterns and polarizations of single-photon emission

AbstractDue to small optical mode volumes and linear polarizations of surface-plasmon-polariton (SPP) resonant modes in metallic antennas, it is very difficult to obtain complex emission patterns and polarizations for single-photon emitters. Herein, nonresonant enhancement in a silver nanowire is used to both enhance emission rates and extract a z-oriented dipole, and then the symmetry of metallic nanostructures is proposed to tailor the patterns and polarizations of single-photon emission. The emission pattern of a quantum dot located close to a metallic nanostructure with a symmetric axis is split into multiple flaps. The number of splitting flaps is equal to the order of the symmetric axis. Moreover, the electric vectors of the emitted photons become centrally symmetric about the symmetric axis. The above phenomena are well explained by both a simulation and an image dipole model. The structural-symmetry-tailoring mechanism may open up a new avenue in the design of multifunctional and novel quantum-plasmonic devices.

Download Full-text

Room-temperature single-photon emitters in titanium dioxide optical defects

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.9.100 ◽

2018 ◽

Vol 9 ◽

pp. 1085-1094 ◽

Cited By ~ 1

Author(s):

Kelvin Chung ◽

Yu H Leung ◽

Chap H To ◽

Aleksandra B Djurišić ◽

Snjezana Tomljenovic-Hanic

Keyword(s):

Titanium Dioxide ◽

Room Temperature ◽

Single Photon ◽

Photon Emission ◽

Wide Bandgap ◽

Single Photon Emission ◽

Correlation Data ◽

Single Photon Emitters ◽

First Time ◽

Photon Source

Fluorescence properties of crystallographic point defects within different morphologies of titanium dioxide were investigated. For the first time, room-temperature single-photon emission in titanium dioxide optical defects was discovered in thin films and commercial nanoparticles. Three-level defects were identified because the g (2) correlation data featured prominent shoulders around the antibunching dip. Stable and blinking photodynamics were observed for the single-photon emitters. These results reveal a new room-temperature single-photon source within a wide bandgap semiconductor.

Download Full-text

Single photon emission from plasma treated 2D hexagonal boron nitride

Nanoscale ◽

10.1039/c7nr08222c ◽

2018 ◽

Vol 10 (17) ◽

pp. 7957-7965 ◽

Cited By ~ 35

Author(s):

Zai-Quan Xu ◽

Christopher Elbadawi ◽

Toan Trong Tran ◽

Mehran Kianinia ◽

Xiuling Li ◽

...

Keyword(s):

Boron Nitride ◽

Plasma Etching ◽

Single Photon ◽

Hexagonal Boron Nitride ◽

Photon Emission ◽

Single Photon Emission ◽

Single Photon Emitters ◽

Ar Plasma

Ar plasma etching and annealing are highly robust in generating oxygen related single photon emitters in hBN.

Download Full-text

Substitutional impurities in monolayer hexagonal boron nitride as single-photon emitters

Nanomaterials and Nanotechnology ◽

10.1177/1847980420949349 ◽

2020 ◽

Vol 10 ◽

pp. 184798042094934

Author(s):

Michele Re Fiorentin ◽

Kiptiemoi Korir Kiprono ◽

Francesca Risplendi

Keyword(s):

Boron Nitride ◽

Density Functional ◽

Single Photon ◽

Hexagonal Boron Nitride ◽

Photon Emission ◽

Single Photon Emission ◽

Defect States ◽

Impurity Atoms ◽

Single Photon Emitters ◽

Substitutional Impurities

Single-photon emitters in hexagonal boron nitride have attracted great attention over the last few years due to their excellent optoelectronical properties. Despite the vast range of results reported in the literature, studies on substitutional impurities belonging to the 13th and 15th groups have not been reported yet. Here, through theoretical modeling, we provide direct evidence that hexagonal boron nitride can be opportunely modified by introducing impurity atoms such as aluminum or phosphorus that may work as color centers for single-photon emission. By means of density functional theory, we focus on determining the structural stability, induced strain, and charge states of such defects and discuss their electronic properties. Nitrogen substitutions with heteroatoms of group 15 are shown to provide attractive features (e.g. deep defect levels and localized defect states) for single-photon emission. These results may open up new possibilities for employing innovative quantum emitters based on hexagonal boron nitride for emerging applications in nanophotonics and nanoscale sensing devices.

Download Full-text

Purification of single-photon emission from hBN using post-processing treatments

Nanophotonics ◽

10.1515/nanoph-2019-0099 ◽

2019 ◽

Vol 8 (11) ◽

pp. 2049-2055 ◽

Cited By ~ 6

Author(s):

Chi Li ◽

Zai-Quan Xu ◽

Noah Mendelson ◽

Mehran Kianinia ◽

Milos Toth ◽

...

Keyword(s):

Quantum Information Processing ◽

Single Photon ◽

Hexagonal Boron Nitride ◽

Photon Emission ◽

Chemical Vapor ◽

Material System ◽

Single Photon Emission ◽

Large Area ◽

Single Photon Emitters ◽

On Chip

AbstractSingle-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising components for on-chip quantum information processing. Recently, large-area hBN films prepared by chemical vapor deposition (CVD) were found to host uniform, high densities of SPEs. However, the purity of these emitters has, to date, been low, hindering their applications in practical devices. In this work, we present two methods for post-growth processing of hBN, which significantly improve SPEs in hBN films that had been transferred from substrates used for CVD. The emitters exhibit high photon purities in excess of 90% and narrow linewidths of ~3 nm at room temperature. Our work lays a foundation for producing high-quality emitters in an ultra-compact two-dimensional material system and paves the way for deployment of hBN SPEs in scalable on-chip photonic and quantum devices.

Download Full-text