scholarly journals Resonant and Selective Excitation of Photocatalytically Active Defect Sites in TiO2

2019 ◽  
Vol 11 (10) ◽  
pp. 10351-10355 ◽  
Author(s):  
Bingya Hou ◽  
Lang Shen ◽  
Haotian Shi ◽  
Jihan Chen ◽  
Bofan Zhao ◽  
...  
Keyword(s):  
Selective Excitation ◽  
Active Defect ◽  
Defect Sites

Tuning the valley polarization in WS2 monolayers via control of active defect sites induced by photochemical doping

2021 ◽  
Vol 118 (12) ◽  
pp. 123103
Author(s):  
I. Demeridou ◽  
A. Papadopoulos ◽  
G. Kourmoulakis ◽  
L. Mouchliadis ◽  
E. Stratakis ◽  
...  
Keyword(s):  
Active Defect ◽  
Defect Sites ◽  
Valley Polarization

Manganese Doping of MoSe2 Promotes Active Defect Sites for Hydrogen Evolution

2019 ◽  
Vol 11 (28) ◽  
pp. 25155-25162 ◽  
Author(s):  
Vasu Kuraganti ◽  
Akash Jain ◽  
Ronen Bar-Ziv ◽  
Ashwin Ramasubramaniam ◽  
Maya Bar-Sadan
Keyword(s):  
Hydrogen Evolution ◽  
Manganese Doping ◽  
Active Defect ◽  
Defect Sites

Enhancing Mg2+ and Mg2+/Li+ storage by introducing active defect sites and edge surfaces in MoSe2

2021 ◽  
Author(s):  
Jingdong Yang ◽  
Jinxing Wang ◽  
Ling Zhu ◽  
Xiao Wang ◽  
Xiaoyang Dong ◽  
...  
Keyword(s):  
Active Defect ◽  
Defect Sites ◽  
Li Storage

Application of Backside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices

1997 ◽  
Author(s):  
S.-S. Lee ◽  
J.-S. Seo ◽  
N.-S. Cho ◽  
S. Daniel
Keyword(s):  
Thermal Emission ◽  
Test Cases ◽  
Memory Devices ◽  
Front Side ◽  
Emission Analysis ◽  
Intensity Attenuation ◽  
Analysis Techniques ◽  
Defect Sites ◽  
Emission Microscopy ◽  
Microscopy Techniques

Abstract Both photo- and thermal emission analysis techniques are used from the backside of the die colocate defect sites. The technique is important in that process and package technologies have made front-side analysis difficult or impossible. Several test cases are documented. Intensity attenuation through the bulk of the silicon does not compromise the usefulness of the technique in most cases.

EPR spectra and defect states in glasses of the GexS100-x system

1982 ◽  
Vol 47 (7) ◽  
pp. 1787-1793 ◽  
Author(s):  
Miloslav Frumar ◽  
Gustáv Plesch ◽  
Eva Černošková ◽  
Václav Černý ◽  
Ladislav Tichý ◽  
...  
Keyword(s):  
Experimental Data ◽  
Epr Spectra ◽  
Defect States ◽  
Composition Region ◽  
Active Defect ◽  
Temperature Conditions ◽  
Defect Centres

Glasses of the GexS100-x system were studied in the region of 30 ⪬ x ⪬ 45. The concept of magnetically active defect centres was employed to account for the EPR spectra of pure samples as well as those doped with silver or iodine, prepared in different temperature conditions. In terms of this concept a consistent interpretation of the experimental data could be given for the composition region applied.

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