Mapping borophene onto graphene: Quasi-exact solutions for guiding potentials in tilted Dirac cones

We show that if the solutions to the (2+1)-dimensional massless Dirac equation for a given 1D potential are known, then they can be used to obtain the eigenvalues and eigenfunctions for the same potential, orientated at an arbitrary angle, in a tilted anisotropic 2D Dirac material. This simple set of transformations enables all the exact and quasi-exact solutions associated with 1D quantum wells in graphene to be applied to the confinement problem in tilted Dirac materials such as borophene. We also show that smooth electron waveguides in tilted Dirac materials can be used to manipulate the degree of valley polarization of quasiparticles travelling along a particular direction of the channel. We examine the particular case of the hyperbolic secant potential to model realistic top-gated structures for valleytronic applications.

Large valley polarization in a novel two-dimensional semiconductor H-ZrX2 (X=Cl, Br, I)

Inspired by the new progress in the research field of two-dimensional valleytronics materials, we propose a new class of transition metal halides, i.e., H-ZrX2 (X=Cl, Br, I), and investigated their valleytronics properties under the first-principles calculations. It harbors the spin-valley coupling at K and K' points in the top of valence band, in which the valley spin splitting of ZrI2 can reach up to 115 meV. By carrying out the strain engineering, the valley spin splitting and Berry curvature can be effectively tuned. The long-sought valley polarization reaches up to 108 meV by doping Cr atom, which corresponds to the large Zeeman magnetic field of 778T. Furthermore, the valley polarization in ZrX2 can be lineally adjusted or flipped by manipulating the magnetization orientation of the doped magnetic atoms. All the results demonstrate the well-founded application prospects of single-layer ZrX2, which can be considered as great candidate for the development of valleytronics and spintronics.

Valley polarization of trions in monolayer MoSe2 interfaced with bismuth iron garnet

Interfacing atomically thin van der Waals semiconductors with magnetic substrates enables additional control on their intrinsic valley degree of freedom and provides a promising platform for the development of novel valleytronic devices for information processing and storage. Here we study circularly polarized photoluminescence in heterostructures of monolayer MoSe2 and thin films of ferrimagnetic bismuth iron garnet. We observe strong emission from charged excitons with circular polarization opposite to that of the pump and demonstrate contrasting response to left and right circularly polarized excitation, associated with finite out-of-plane magnetization in the substrate. We propose a theoretical model accounting for magnetization-induced imbalance of charge carriers in the two valleys of MoSe2, as well as for valley-switching scattering from B to A excitons and fast formation of trions with extended valley relaxation times, which shows excellent agreement with the experimental data. Our results establish monolayer MoSe2 interfaced with bismuth iron garnet as a promising system for valley control of charged excitons.