scholarly journals In Situ-Generated Volatile Precursor for CVD Growth of a Semimetallic 2D Dichalcogenide

2018 ◽  
Vol 10 (40) ◽  
pp. 34401-34408 ◽  
Author(s):  
Zhenfei Gao ◽  
Qingqing Ji ◽  
Pin-Chun Shen ◽  
Yimo Han ◽  
Wei Sun Leong ◽  
...  

2008 ◽  
Vol 1142 ◽  
Author(s):  
Hideto Yoshida ◽  
Seiji Takeda ◽  
Tetsuya Uchiyama ◽  
Hideo Kohno ◽  
Yoshikazu Homma

ABSTRACTNucleation and growth processes of carbon nanotubes (CNTs) in iron catalyzed chemical vapor deposition (CVD) have been observed by means of in-situ environmental transmission electron microscopy. Our atomic scale observations demonstrate that solid state iron carbide (Fe3C) nanoparticles act as catalyst for the CVD growth of CNTs. Iron carbide nanoparticles are structurally fluctuated in CVD condition. Growth of CNTs can be simply explained by bulk diffusion of carbon atoms since nanoparticles are carbide.



Nano Research ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 3433-3438
Author(s):  
Jukka-Pekka Kaikkonen ◽  
Abhilash Thanniyil Sebastian ◽  
Patrik Laiho ◽  
Nan Wei ◽  
Marco Will ◽  
...  

AbstractWe report a new scheme for fabrication of clean, suspended superconducting weak links from pristine single-walled carbon nanotubes (SWCNT). The SWCNTs were grown using the floating-catalyst chemical vapour deposition (FC-CVD) and directly deposited on top of prefabricated superconducting molybdenum-rhenium (MoRe) electrodes by thermophoresis at nearly ambient conditions. Transparent contacts to SWCNTs were obtained by vacuum-annealing the devices at 900 °C, which enabled proximity-induced supercurrents up to 53 nA. SWCNT weak links fabricated on MoRe/palladium bilayer sustained supercurrents up to 0.4 nA after annealing at relatively low temperature of 220 °C. The fabrication process does neither expose SWCNTs to lithographic chemicals, nor the contact electrodes to the harsh conditions of in situ CVD growth. Our scheme facilitates new experimental possibilities for hybrid superconducting devices.



2013 ◽  
Vol 740-742 ◽  
pp. 209-212 ◽  
Author(s):  
Rooban Venkatesh K.G. Thirumalai ◽  
Bharat Krishnan ◽  
Albert Davydov ◽  
Joseph Neil Merrett ◽  
Yaroslav Koshka

A method was developed for growing SiC nanowires without depositing a metal catalyst on the targeted surfaces prior to the CVD growth. The proposed method utilizes in-situ vapor-phase catalyst delivery via sublimation of the catalyst from a metal source placed in the hot zone of the CVD reactor, followed by condensation of the catalyst-rich vapor on the bare substrate surface to form the catalyst nanoparticles. The vapor-phase catalyst delivery and the resulting nanowire density was found to be influenced by both the gas flow rate and the catalyst diffusion through the boundary layer above the catalyst source. The origin of undesirable bushes of nanowires and the role of the C/Si ratio were established.



2020 ◽  
Vol 8 (30) ◽  
pp. 10438-10447
Author(s):  
Deepa Thakur ◽  
Pawan Kumar ◽  
Viswanath Balakrishnan

We report the direct chemical vapour deposition (CVD) growth of the metastable 1T phase of a WS2 monolayer and the in situ phase transition characteristics with the aid of Raman, photoluminescence and fluorescence microscopy.



2000 ◽  
Vol 159-160 ◽  
pp. 143-148 ◽  
Author(s):  
K Nishida ◽  
K Morisawa ◽  
A Hiraki ◽  
S Muraishi ◽  
T Katoda


1989 ◽  
Vol 158 ◽  
Author(s):  
R. Scarmozzino ◽  
T. Cacouris ◽  
R.M. Osgood

ABSTRACTIn situ measurement of resistance has been used for the realtime monitoring of metallorganic chemical vapor deposition (CVD) growth characteristics. In particular, a novel technique for measuring metallorganic CVD activation energies is presented. The micron scale geometry of the experiment makes it relevant to work in localized laser CVD. The technique has been used to measure the CVD activation energy of dimethylaluminum hydride (DMAlH). In addition, a variant of the technique has been used to study the growth stage of a resistless two-step metallization process (nucleation / selective CVD) employing DMAIH as the source gas in both steps.



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