Shockley Partial Dislocation-Induced Self-Rectified 1D Hydrogen Evolution Photocatalyst

2019 ◽  
Vol 11 (22) ◽  
pp. 20521-20527 ◽  
Author(s):  
Zhonghui Han ◽  
Weizhao Hong ◽  
Weinan Xing ◽  
Yidong Hu ◽  
Yansong Zhou ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Partial Dislocation ◽  
Shockley Partial Dislocation ◽  
Shockley Partial

scholarly journals Shrinking stacking fault through glide of the Shockley partial dislocation in hard-sphere crystal under gravity

2007 ◽  
Vol 105 (10) ◽  
pp. 1377-1383 ◽  
Author(s):  
Atsushi Mori ◽  
Yoshihisa Suzuki ◽  
Shin-Ichiro Yanagiya ◽  
Tsutomu Sawada ◽  
Kensaku Ito
Keyword(s):  
Hard Sphere ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Shockley Partial Dislocation ◽  
Shockley Partial

Observation of dislocation reactions in CDTE at lattice resolution

1983 ◽  
Vol 41 ◽  
pp. 112-113
Author(s):  
T. Yamashita ◽  
R. Sinclair
Keyword(s):  
Partial Dislocation ◽  
Video Recording ◽  
Dislocation Motion ◽  
Video Tape ◽  
Exposure Rate ◽  
Shockley Partial Dislocation ◽  
Shockley Partial ◽  
Partial Dislocations ◽  
Lattice Resolution ◽  
Obvious Extension

Recently, lattice resolution video-recording of dislocation motion in CdTe has been reported by Sinclair et al, using the Cambridge 500 keV microscope equipped with a TV camera. Phenomena such as the motion of Shockley partial dislocations and climb of Frank dislocations were recorded onto a video tape which has an exposure rate of 50 half-frames per second. An obvious extension of this work is to study the dislocation reactions. An example of such a reaction which was detected in CdTe is shown in Fig. 1. The micrographs were taken several seconds apart in a JEOL 200CX microscope, and they show dissociation of a Frank dislocation into a Shockley partial dislocation and a Lomer dislocation (ie., a sessile lock).

Computer Simulation of Creation of Dislocations in Copper Small Crystals

1993 ◽  
Vol 319 ◽  
Author(s):  
H. Tanaka ◽  
Masao Doyama
Keyword(s):  
Molecular Dynamics ◽  
Computer Simulation ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Shockley Partial Dislocation ◽  
Shockley Partial ◽  
Small Crystals ◽  
The Creation

AbstractDislocations were created near the center of the surface (101) of copper small crystals whose surfaces are (111), (111), (101), (101), (121), and (121) by use of n-body atom potentials and molecular dynamics. At first, a Heidenreich-Shockley partial dislocation was created., As the partial dislocation proceeds, the partial dislocation and the surface was connected with a stacking fault until the next Heidenreich-Shockley partial dislocation was created at the surface.Just before the creation of a partial dislocation the stress was the highest.

Computer Simulation of Creation of Dislocations in Copper Small Crystals

1993 ◽  
Vol 319 ◽  
Author(s):  
H. Tanaka ◽  
Masao Doyama
Keyword(s):  
Molecular Dynamics ◽  
Computer Simulation ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Shockley Partial Dislocation ◽  
Shockley Partial ◽  
Small Crystals ◽  
The Creation

AbstractDislocations were created near the center of the surface (101) of copper small crystals whose surfaces are (111), (111), (101), (101), (121), and (121) by use of n-body atom potentials and molecular dynamics. At first, a Heidenreich-Shockley partial dislocation was created., As the partial dislocation proceeds, the partial dislocation and the surface was connected with a stacking fault until the next Heidenreich-Shockley partial dislocation was created at the surface.Just before the creation of a partial dislocation the stress was the highest.

Creation and Motion of Edge Dislocations in Copper Single Crystals

1997 ◽  
Vol 505 ◽  
Author(s):  
Masaodoyama ◽  
Yoshiaki Kogure ◽  
Tadatoshi Nozaki
Keyword(s):  
Molecular Dynamics ◽  
Single Crystals ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Shockley Partial Dislocation ◽  
Shockley Partial ◽  
Small Crystals ◽  
The Creation ◽  
Copper Single Crystals ◽  
Edge Dislocations

ABSTRACTDislocations were created near the center of the surface (110) of copper small crystals whose surfaces are (111), (111), (110), (110), (112), and (112) by use of n-body atom potentials and molecular dynamics. At first, a Heidenreich-Shockley partial dislocation was created. As the partial dislocation proceeds, the partial dislocation and the surface was connected with a stacking fault until the next Heidenreich-Shockley partial dislocation was created at the surface.Just before the creation of a partial dislocation the stress was the highest. For larger crystals, forming a step on (110) plane was not enough and a shear was necessary to move dislocations.

Energetics of the 30∘ Shockley partial dislocation in wurtzite GaN

2006 ◽  
Vol 40 (4-6) ◽  
pp. 458-463 ◽  
Author(s):  
I. Belabbas ◽  
G. Dimitrakopulos ◽  
J. Kioseoglou ◽  
A. Béré ◽  
J. Chen ◽  
...  
Keyword(s):  
Partial Dislocation ◽  
Shockley Partial Dislocation ◽  
Shockley Partial

Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending

2005 ◽  
Vol 2 (6) ◽  
pp. 1998-2003 ◽  
Author(s):  
H. Idrissi ◽  
G. Regula ◽  
M. Lancin ◽  
J. Douin ◽  
B. Pichaud
Keyword(s):  
Partial Dislocation ◽  
Dislocation Mobility ◽  
Shockley Partial Dislocation ◽  
Shockley Partial ◽  
Cantilever Bending

Transformation–dislocation dipoles in Laves phases: A high-resolution transmission electron microscopy analysis

2010 ◽  
Vol 25 (10) ◽  
pp. 1983-1991 ◽  
Author(s):  
J. Aufrecht ◽  
A. Leineweber ◽  
V. Duppel ◽  
E.J. Mittemeijer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Partial Dislocation ◽  
Laves Phases ◽  
Dislocation Configuration ◽  
Shockley Partial Dislocation ◽  
Shockley Partial ◽  
Partial Dislocations ◽  
Transmission Electron

Images of synchro-Shockley partial dislocation arrangements in the Laves phases NbCr2 and HfCr2 have been obtained by high-resolution transmission electron microscopy. The analysis of the stacking sequences around these arrangements revealed the role of the constituting partial dislocations in enabling the polytypic C14 → C36/6H phase transformation in both alloys. The synchro-Shockley partial dislocations occur in and move through the crystals mainly as dipoles of partials of opposite signs, leading to—as compared to isolated partials—strain fields of lesser extent. In NbCr2 a single, probably quenched synchro-Shockley partial dislocation dipole, consisting of two partials with Burgers vectors of opposite sign, was identified. The ordered passage of a series of this type of line defects brings about the C14 → C36 transformation. In HfCr2 a complex synchro-Shockley partial dislocation configuration was revealed. It can be regarded as an “antiphase boundary” between two C36 domains. It is likely that this defect structure had formed by impingement of two domains of C36 growing perpendicular to the stacking direction by glide of synchro-Shockley partial dislocation dipoles.

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