Computer Simulation of Creation of Dislocations in Copper Small Crystals

1993 ◽  
Vol 319 ◽  
Author(s):  
H. Tanaka ◽  
Masao Doyama
Keyword(s):  
Molecular Dynamics ◽  
Computer Simulation ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Shockley Partial Dislocation ◽  
Shockley Partial ◽  
Small Crystals ◽  
The Creation

AbstractDislocations were created near the center of the surface (101) of copper small crystals whose surfaces are (111), (111), (101), (101), (121), and (121) by use of n-body atom potentials and molecular dynamics. At first, a Heidenreich-Shockley partial dislocation was created., As the partial dislocation proceeds, the partial dislocation and the surface was connected with a stacking fault until the next Heidenreich-Shockley partial dislocation was created at the surface.Just before the creation of a partial dislocation the stress was the highest.

Computer Simulation of Creation of Dislocations in Copper Small Crystals

1993 ◽  
Vol 319 ◽  
Author(s):  
H. Tanaka ◽  
Masao Doyama
Keyword(s):  
Molecular Dynamics ◽  
Computer Simulation ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Shockley Partial Dislocation ◽  
Shockley Partial ◽  
Small Crystals ◽  
The Creation

AbstractDislocations were created near the center of the surface (101) of copper small crystals whose surfaces are (111), (111), (101), (101), (121), and (121) by use of n-body atom potentials and molecular dynamics. At first, a Heidenreich-Shockley partial dislocation was created., As the partial dislocation proceeds, the partial dislocation and the surface was connected with a stacking fault until the next Heidenreich-Shockley partial dislocation was created at the surface.Just before the creation of a partial dislocation the stress was the highest.

Creation and Motion of Edge Dislocations in Copper Single Crystals

1997 ◽  
Vol 505 ◽  
Author(s):  
Masaodoyama ◽  
Yoshiaki Kogure ◽  
Tadatoshi Nozaki
Keyword(s):  
Molecular Dynamics ◽  
Single Crystals ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Shockley Partial Dislocation ◽  
Shockley Partial ◽  
Small Crystals ◽  
The Creation ◽  
Copper Single Crystals ◽  
Edge Dislocations

ABSTRACTDislocations were created near the center of the surface (110) of copper small crystals whose surfaces are (111), (111), (110), (110), (112), and (112) by use of n-body atom potentials and molecular dynamics. At first, a Heidenreich-Shockley partial dislocation was created. As the partial dislocation proceeds, the partial dislocation and the surface was connected with a stacking fault until the next Heidenreich-Shockley partial dislocation was created at the surface.Just before the creation of a partial dislocation the stress was the highest. For larger crystals, forming a step on (110) plane was not enough and a shear was necessary to move dislocations.

scholarly journals Shrinking stacking fault through glide of the Shockley partial dislocation in hard-sphere crystal under gravity

2007 ◽  
Vol 105 (10) ◽  
pp. 1377-1383 ◽  
Author(s):  
Atsushi Mori ◽  
Yoshihisa Suzuki ◽  
Shin-Ichiro Yanagiya ◽  
Tsutomu Sawada ◽  
Kensaku Ito
Keyword(s):  
Hard Sphere ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Shockley Partial Dislocation ◽  
Shockley Partial

Computer Simulation of Creation and Motion of Edge Dislocations in Face Centered Crystals

1994 ◽  
Vol 356 ◽  
Author(s):  
N. Tajima ◽  
T. Nozaki ◽  
T. Hirade ◽  
Y. Kogure ◽  
Masao Doyama
Keyword(s):  
Molecular Dynamics ◽  
Computer Simulation ◽  
Edge Dislocation ◽  
Embedded Atom ◽  
Small Crystals ◽  
Face Centered ◽  
Edge Dislocations

AbstractComplete and dissociated edge dislocations were created near the center of the surface (101) of aluminum small crystals whose surfaces are (111), (111), (101), (101). (121) and (121). Molecular dynamics with N-body embedded atom potentials were used. Higher stress is needed to create a complete edge dislocation than to create a dissociated dislocation.

Shockley Partial Dislocation-Induced Self-Rectified 1D Hydrogen Evolution Photocatalyst

2019 ◽  
Vol 11 (22) ◽  
pp. 20521-20527 ◽  
Author(s):  
Zhonghui Han ◽  
Weizhao Hong ◽  
Weinan Xing ◽  
Yidong Hu ◽  
Yansong Zhou ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Partial Dislocation ◽  
Shockley Partial Dislocation ◽  
Shockley Partial

Observation of dislocation reactions in CDTE at lattice resolution

1983 ◽  
Vol 41 ◽  
pp. 112-113
Author(s):  
T. Yamashita ◽  
R. Sinclair
Keyword(s):  
Partial Dislocation ◽  
Video Recording ◽  
Dislocation Motion ◽  
Video Tape ◽  
Exposure Rate ◽  
Shockley Partial Dislocation ◽  
Shockley Partial ◽  
Partial Dislocations ◽  
Lattice Resolution ◽  
Obvious Extension

Recently, lattice resolution video-recording of dislocation motion in CdTe has been reported by Sinclair et al, using the Cambridge 500 keV microscope equipped with a TV camera. Phenomena such as the motion of Shockley partial dislocations and climb of Frank dislocations were recorded onto a video tape which has an exposure rate of 50 half-frames per second. An obvious extension of this work is to study the dislocation reactions. An example of such a reaction which was detected in CdTe is shown in Fig. 1. The micrographs were taken several seconds apart in a JEOL 200CX microscope, and they show dissociation of a Frank dislocation into a Shockley partial dislocation and a Lomer dislocation (ie., a sessile lock).

Computer Simulation of Tensile Deformation of Titanium Small Single Crystals with Stacking Faults

1993 ◽  
Vol 319 ◽  
Author(s):  
M. Aoshima ◽  
T. Kusube ◽  
J. Ida ◽  
Masao Doyama
Keyword(s):  
Molecular Dynamics ◽  
Computer Simulation ◽  
Single Crystals ◽  
Yield Stress ◽  
Tensile Deformation ◽  
Tensile Axis ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Molecular Dynamics Method ◽  
Dynamics Method

AbstractSmall single crystals of titanium with and without stacking faults have been pulled by use of the molecular dynamics method. The tensile axis was [0001] and the stacking fault was introduced on (0001) pianes. The yield stress was higher in the crystal with stacking faults. The deformation was complicated in the crystal with stacking fault. Dislocations were created near the tip of a crack and moved on (1122).

Computer Simulation of Plastic Deformation of Small Crystals

1991 ◽  
Vol 239 ◽  
Author(s):  
Masao Doyama
Keyword(s):  
Computer Simulation ◽  
Plastic Deformation ◽  
Yield Stress ◽  
Partial Dislocation ◽  
Iron Whisker ◽  
Small Crystals ◽  
Iron Whiskers

ABSTRACTThe deformation of body centered iron whiskers has been simulated. The iron whisker has a very sharp yield stress. Dislocations are created in a small coppe crystal. A higher stress was needed to create the first partial dislocation but less stress to create the second partial dislocation.

scholarly journals Apparent Anomalous Absorption and Image Matching

1969 ◽  
Vol 22 (5) ◽  
pp. 559 ◽  
Author(s):  
LM Clarebrough
Keyword(s):  
Electron Micrographs ◽  
Image Matching ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Anomalous Absorption ◽  
Shockley Partial Dislocation ◽  
Topological Features ◽  
Wide Range ◽  
Visual Matching ◽  
Absorption Constant

Visual matching of experimental and theoretical electron micrographs can be used to determine the apparent anomalous absorption constant. The method has been applied to a copper-silicon (8 at. % Si) alloy by matching experimental and theoretical images of a Shockley partial dislocation and the main and subsidiary fringes of the associated stacking fault. The value of 0�067 which is obtained is considerably less than the value of 0�1 usually assumed for metals and alloys. In foils approximately 3611 thick details of the image are very sensitive to the value ofthe anomalous absorption constant and the value of 0�1 is inadequate for image matching. However, in foils approximately 6611thick the general topological features of an image are little altered by varying the anomalous absorption constant over a wide range and the approximate value of O� 1 is adequate for image matching.

Sign in / Sign up

Export Citation Format

Share Document