Creation and Motion of Edge Dislocations in Copper Single Crystals

1997 ◽  
Vol 505 ◽  
Author(s):  
Masaodoyama ◽  
Yoshiaki Kogure ◽  
Tadatoshi Nozaki

ABSTRACTDislocations were created near the center of the surface (110) of copper small crystals whose surfaces are (111), (111), (110), (110), (112), and (112) by use of n-body atom potentials and molecular dynamics. At first, a Heidenreich-Shockley partial dislocation was created. As the partial dislocation proceeds, the partial dislocation and the surface was connected with a stacking fault until the next Heidenreich-Shockley partial dislocation was created at the surface.Just before the creation of a partial dislocation the stress was the highest. For larger crystals, forming a step on (110) plane was not enough and a shear was necessary to move dislocations.


1993 ◽  
Vol 319 ◽  
Author(s):  
H. Tanaka ◽  
Masao Doyama

AbstractDislocations were created near the center of the surface (101) of copper small crystals whose surfaces are (111), (111), (101), (101), (121), and (121) by use of n-body atom potentials and molecular dynamics. At first, a Heidenreich-Shockley partial dislocation was created., As the partial dislocation proceeds, the partial dislocation and the surface was connected with a stacking fault until the next Heidenreich-Shockley partial dislocation was created at the surface.Just before the creation of a partial dislocation the stress was the highest.



1993 ◽  
Vol 319 ◽  
Author(s):  
H. Tanaka ◽  
Masao Doyama

AbstractDislocations were created near the center of the surface (101) of copper small crystals whose surfaces are (111), (111), (101), (101), (121), and (121) by use of n-body atom potentials and molecular dynamics. At first, a Heidenreich-Shockley partial dislocation was created., As the partial dislocation proceeds, the partial dislocation and the surface was connected with a stacking fault until the next Heidenreich-Shockley partial dislocation was created at the surface.Just before the creation of a partial dislocation the stress was the highest.



2007 ◽  
Vol 105 (10) ◽  
pp. 1377-1383 ◽  
Author(s):  
Atsushi Mori ◽  
Yoshihisa Suzuki ◽  
Shin-Ichiro Yanagiya ◽  
Tsutomu Sawada ◽  
Kensaku Ito


2002 ◽  
Vol 16 (28n29) ◽  
pp. 4431-4435
Author(s):  
MASAO DOYAMA ◽  
Y. KOGURE ◽  
T. NOZAKI ◽  
Y. KATO

Simulations were performed to model the response of a copper rectangular parallelepiped single crystal with a notch to tensile deformation. Partial dislocations were created near the tip of the notch as we expected. It is hard to see where the dislocations were created by just looking at the displaced positions of atoms, but the creation of dislocations was easily observed by a simulation of X-ray Lang method. Before creation of dislocations, some indication was quite clearly shown. Laue patterns during tensile deformation were also simulated.



1992 ◽  
Vol 278 ◽  
Author(s):  
Masao Doyama

AbstractEdge dislocations were created on a surface of a small copper single crystal. Very sharp yield stress was observed when a partial dislocation was created. Edge dislocations in copper were split into Heidenreich–Shockley partial dislocations connected with the stacking fault.



1994 ◽  
Vol 356 ◽  
Author(s):  
N. Tajima ◽  
T. Nozaki ◽  
T. Hirade ◽  
Y. Kogure ◽  
Masao Doyama

AbstractComplete and dissociated edge dislocations were created near the center of the surface (101) of aluminum small crystals whose surfaces are (111), (111), (101), (101). (121) and (121). Molecular dynamics with N-body embedded atom potentials were used. Higher stress is needed to create a complete edge dislocation than to create a dissociated dislocation.



2019 ◽  
Vol 11 (22) ◽  
pp. 20521-20527 ◽  
Author(s):  
Zhonghui Han ◽  
Weizhao Hong ◽  
Weinan Xing ◽  
Yidong Hu ◽  
Yansong Zhou ◽  
...  


Author(s):  
T. Yamashita ◽  
R. Sinclair

Recently, lattice resolution video-recording of dislocation motion in CdTe has been reported by Sinclair et al, using the Cambridge 500 keV microscope equipped with a TV camera. Phenomena such as the motion of Shockley partial dislocations and climb of Frank dislocations were recorded onto a video tape which has an exposure rate of 50 half-frames per second. An obvious extension of this work is to study the dislocation reactions. An example of such a reaction which was detected in CdTe is shown in Fig. 1. The micrographs were taken several seconds apart in a JEOL 200CX microscope, and they show dissociation of a Frank dislocation into a Shockley partial dislocation and a Lomer dislocation (ie., a sessile lock).



1967 ◽  
Vol 45 (2) ◽  
pp. 777-786 ◽  
Author(s):  
J. T. Fourie

A comparison is made between the slip-line structure of two copper single crystals, where the glide path length of edge dislocations is 1.44 mm and 0.066 mm, respectively. No significant difference is found. This leads to the conclusion that dislocations that escape at the surface of a crystal are generated very close to it.Stress–strain experiments on thin layers of crystal from the surface and from the center of previously deformed crystals confirm that slip lines are not representative of the bulk deformation. They also show that a flow-stress gradient exists between the surface and the center of the crystal. It is argued that the existence of such a gradient can be used to explain the dependence of the extent of stage I on the glide path length of edge dislocations.



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