Nature of Electronic Conduction in “Pseudocapacitive” Films: Transition from the Insulator State to Band-Conduction

2019 ◽  
Vol 11 (32) ◽  
pp. 28769-28773 ◽  
Author(s):  
Cyrille Costentin ◽  
Thomas R. Porter ◽  
Jean-Michel Savéant
Keyword(s):  
Electronic Conduction ◽  
Band Conduction

IMPURITY BAND CONDUCTION STUDY BY PIEZORESISTANCE MEASUREMENTS

1976 ◽  
Vol 37 (C4) ◽  
pp. C4-333-C4-336
Author(s):  
M. AVEROUS ◽  
J. CALAS ◽  
C. FAU
Keyword(s):  
Impurity Band ◽  
Band Conduction

Electronic Conduction in Oxides

1991 ◽  
Author(s):  
Nobuo Tsuda ◽  
Keiichiro Nasu ◽  
Akira Yanase ◽  
Kiiti Siratori
Keyword(s):  
Electronic Conduction

Pressure Effects on Two-Band Conduction and Superconductivity in C- and Al-Substituted MgB2 Single Crystals

2010 ◽  
Vol 79 (7) ◽  
pp. 074719 ◽  
Author(s):  
Takahiko Masui ◽  
Yuji Mikasa ◽  
Sergey Lee ◽  
Setsuko Tajima
Keyword(s):  
Single Crystals ◽  
Pressure Effects ◽  
Band Conduction

scholarly journals Impurity band conduction in Si-doped β-Ga2O3 films

2021 ◽  
Vol 118 (7) ◽  
pp. 072105
Author(s):  
Anil Kumar Rajapitamahuni ◽  
Laxman Raju Thoutam ◽  
Praneeth Ranga ◽  
Sriram Krishnamoorthy ◽  
Bharat Jalan
Keyword(s):  
Impurity Band ◽  
Si Doped ◽  
Band Conduction

IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN n-GALLIUM ARSENIDE

1967 ◽  
Vol 45 (1) ◽  
pp. 119-126 ◽  
Author(s):  
J. Basinski ◽  
R. Olivier
Keyword(s):  
Ionization Energy ◽  
Impurity Band ◽  
Shallow Donor ◽  
Band Model ◽  
A Value ◽  
Transition Concentration ◽  
Temperature Electron ◽  
Two Band Model ◽  
Band Conduction ◽  
Made In

Hall effect and resistivity measurements have been made in the temperature range 4.2–360 °K on several samples of n-type GaAs grown under oxygen atmosphere and without any other intentional dopings. The principal shallow donor in this material is considered to be Si. All samples exhibited impurity-band conduction at low temperature. Electron concentrations in the conduction band were calculated, using a two-band model, and then fitted to the usual equation expressing charge neutrality. A value of 2.3 × 10−3 eV was obtained for the ionization energy of the donors, for donor concentration ranging from 5 × 1015 cm−3 to 2 × 1016 cm−3. The conduction in the impurity band was of the hopping type for these concentrations. A value of 3.5 × 1016 cm−3 was obtained for the critical transition concentration of the impurity-band conduction to the metallic type.

Reversibly Altering Electronic Conduction through a Single Molecule by a Chemical Binding Event

2003 ◽  
Vol 107 (45) ◽  
pp. 12378-12382 ◽  
Author(s):  
Bala Sundari T. Kasibhatla ◽  
André P. Labonté ◽  
Ferdows Zahid ◽  
Ronald G. Reifenberger ◽  
Supriyo Datta ◽  
...  
Keyword(s):  
Single Molecule ◽  
Electronic Conduction ◽  
Chemical Binding ◽  
Binding Event

scholarly journals Understanding metal propagation in solid electrolytes due to mixed ionic-electronic conduction

Matter ◽  
2021 ◽  
Vol 4 (10) ◽  
pp. 3248-3268
Author(s):  
Qingsong Tu ◽  
Tan Shi ◽  
Srinath Chakravarthy ◽  
Gerbrand Ceder
Keyword(s):  
Solid Electrolytes ◽  
Electronic Conduction
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