Light Element Analysis Using Txrf

Over the past few years there has been substantial progress in the TXRF analysis of heavy element surface contamination on silicon wafers. Further advances and improvements are desired in the analytical performance and hardware. Extension of the analytical range to include the light elements is particularly desirable.In the case of light element analysis, sodium and aluminum impurities have been monitored in the IC production process. The increase of the sodium impurity in a silicon wafer gives rise to a decrease in the insulation in IC devices and the growth of the SiO2 film is disturbed by the prsence of aluminum impurity on the silicon wafer surface.

The paramagnetic germanium–sodium impurity centres and in α-quartz

Centres [Formula: see text] formed in α-quartz by 77 K x irradiation and warming above ca. 165 K, both exhibit a reversible change in symmetry of the centres from C1 at 75 K to C2 at 295 K, as observed by X-band electronic paramagnetic resonance spectroscopy. Each centre contains a Ge3+ ion (S = 1/2) substituted for a Si4+ ion, with a nearby Na+ interstitial ion. Spin-Hamiltonian electronic Zeeman, 73Ge and 23Na nuclear hyperfine and quadrupole parameter matrices for these centres were measured at temperatures 75, 190, and 295 K. They show that the change is associated with the defect reorienting between sites related by a two-fold crystallographic axis a, with energy barrier 0.223(6) eV for A and 0.178(14) eV for C. In both centres, ca. 50% of the spin density is located in a Ge sp orbital; in A, the sp orbital is oriented close to a, while in C it is nearly parallel to an O–Si–O bond-angle bisector that is nearly normal to a. Theoretical hyperfine matrices indicate that the Na ions are located near a, in a c-axis channel near the Ge site. Above ca. 270 K, A and C are observably in equilibrium, and are thus deemed to be isomeric species.