Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors

Structural And Electrical Properties ◽

Ws2 Nanosheets

Electron radiation effects on the structural and electrical properties of MoS2 field effect transistors

Nanotechnology ◽

10.1088/1361-6528/ab3ce2 ◽

2019 ◽

Vol 30 (48) ◽

pp. 485201

Author(s):

Heyi Li ◽

Chaoming Liu ◽

Yanqing Zhang ◽

Chunhua Qi ◽

Yidan Wei ◽

...

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Radiation Effects ◽

Electron Radiation ◽

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics ◽

Structural and Electrical Properties of Ferroelectric-Gate Field-Effect-Transistors Using Au/(Bi,La)4Ti3O12/SrTa2O6/Si Structures

10.1109/isaf.2007.4393169 ◽

2007 ◽

Cited By ~ 1

Author(s):

Ho-Seung Jeon ◽

Jeong-Hwan Kim ◽

Joo-Nam Kim ◽

Kwang-Hun Park ◽

Byung-Eun Park

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Length separation of single-walled carbon nanotubes and its impact on structural and electrical properties of wafer-level fabricated carbon nanotube–field-effect transistors

Nanotechnology ◽

10.1088/0957-4484/27/43/435203 ◽

2016 ◽

Vol 27 (43) ◽

pp. 435203 ◽

Cited By ~ 3

Author(s):

Simon Böttger ◽

Sascha Hermann ◽

Stefan E Schulz ◽

Thomas Gessner

Keyword(s):

Carbon Nanotubes ◽

Carbon Nanotube ◽

Electrical Properties ◽

Field Effect ◽

Single Walled Carbon Nanotubes ◽

Wafer Level ◽

Structural And Electrical Properties ◽

Length Separation ◽

Walled Carbon Nanotubes

Structural and electrical properties of metal-ferroelectric-insulator-semiconductor field-effect transistors using a Pt/Bi3.25La0.75Ti3O12/CeO2/Si structure

Thin Solid Films ◽

10.1016/j.tsf.2003.09.064 ◽

2004 ◽

Vol 447-448 ◽

pp. 322-326 ◽

Cited By ~ 8

Author(s):

Jung-Mi Lee ◽

Kyoung-Tae Kim ◽

Chang-Il Kim

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks

Applied Physics Letters ◽

10.1063/1.3430572 ◽

2010 ◽

Vol 96 (21) ◽

pp. 212901 ◽

Cited By ~ 7

Author(s):

C. Marchiori ◽

E. Kiewra ◽

J. Fompeyrine ◽

C. Gerl ◽

C. Rossel ◽

...

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Gate Stacks ◽

Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors

IEICE Transactions on Electronics ◽

10.1587/transele.e95.c.885 ◽

2012 ◽

Vol E95.C (5) ◽

pp. 885-890 ◽

Cited By ~ 3

Author(s):

Min LIAO ◽

Hiroshi ISHIWARA ◽

Shun-ichiro OHMI

Keyword(s):

Electrical Properties ◽

Growth Mechanism ◽

Field Effect ◽

Gate Insulator ◽

Organic Field Effect Transistors

Electrical Properties of Thermally Annealed β-Ga2O3 Metal-Semiconductor Field-Effect Transistors with Pt/Au Schottky Contacts

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0231907jss ◽

2019 ◽

Vol 8 (7) ◽

pp. Q3122-Q3125

Author(s):

Suhyun Kim ◽

Jihyun Kim

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Schottky Contacts

Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2/Si structure

Journal of the Ceramic Society of Japan ◽

10.2109/jcersj2.118.1013 ◽

2010 ◽

Vol 118 (1383) ◽

pp. 1013-1016 ◽

Cited By ~ 1

Author(s):

Gwang-Geun LEE ◽

Hui-Seong HAN ◽

Yun-Soo CHOI ◽

Byung-Eun PARK

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Polyvinylidene Fluoride ◽

Field Effect Transistors

Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

Applied Physics Letters ◽

10.1063/1.5028529 ◽

2018 ◽

Vol 113 (6) ◽

pp. 062103 ◽

Cited By ~ 10

Author(s):

Tae-Eon Bae ◽

Kimihiko Kato ◽

Ryota Suzuki ◽

Ryosho Nakane ◽

Mitsuru Takenaka ◽

...

Keyword(s):

Electrical Properties ◽

Impurity Concentration ◽

Field Effect ◽

Tunneling Field Effect Transistors

Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors

Applied Surface Science ◽

10.1016/j.apsusc.2019.03.130 ◽

2019 ◽

Vol 481 ◽

pp. 632-636 ◽

Cited By ~ 10

Author(s):

Yu Yang ◽

Jiayan Yang ◽

Wenlei Yin ◽

Fanming Huang ◽

Anyang Cui ◽

...

Keyword(s):

Electrical Properties ◽

Annealing Time ◽

Field Effect ◽

P Type