Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method

2014 ◽  
Vol 6 (7) ◽  
pp. 5012-5017 ◽  
Author(s):  
Wei Hu ◽  
Lilan Zou ◽  
Xinman Chen ◽  
Ni Qin ◽  
Shuwei Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Resistive Switching ◽  
Deposition Method ◽  
Solution Deposition ◽  
Amorphous Ingazno ◽  
Highly Uniform

Highly uniform resistive switching effect in amorphous Bi2O3 thin films fabricated by a low-temperature photochemical solution deposition method

2015 ◽  
Vol 120 (1) ◽  
pp. 379-384 ◽  
Author(s):  
Ruqi Chen ◽  
Wei Hu ◽  
Lilan Zou ◽  
Baojun Li ◽  
Dinghua Bao
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Resistive Switching ◽  
Switching Effect ◽  
Deposition Method ◽  
Solution Deposition ◽  
Highly Uniform ◽  
Resistive Switching Effect

Preparation and Properties of V-Doped (Bi,Nd)4Ti3O12 Ferroelectric Thin Films by Chemical Solution Deposition Method

2004 ◽  
Vol 62 (1) ◽  
pp. 233-241 ◽  
Author(s):  
TAKASHI HAYASHI ◽  
NAOYA IIZAWA ◽  
DAICHI TOGAWA ◽  
MIO YAMADA ◽  
WATARU SAKAMOTO ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Ferroelectric Thin Films ◽  
Deposition Method ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

Low Temperature Measurement of the Electrical Conductivity in Amorphous InGaZnO Thin Films

2013 ◽  
Vol 3 (2) ◽  
pp. P10-P12 ◽  
Author(s):  
Hasung Sim ◽  
Seongil Choi ◽  
Je-Geun Park ◽  
Jaewon Song ◽  
Seungwu Han ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Temperature Measurement ◽  
Amorphous Ingazno

Epitaxial growth of PbZr0.5Ti0.5O3 thin films on (001) LaAlO3 by the chemical solution deposition method

1999 ◽  
Vol 14 (10) ◽  
pp. 4004-4010 ◽  
Author(s):  
J. H. Kim ◽  
F. F. Lange
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Driving Force ◽  
Fluorite Phase ◽  
Deposition Method ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Boundary Area ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on (001) LaAlO3 substrates (∼6.1% lattice mismatch) by the chemical solution deposition method. The sequence of epitaxy during heating between 375 and 700 °C/1h was characterized by x-ray diffraction and transmission electron microscopy. At approximately 375 °C/1h, a nanocrystalline metastable fluorite phase of PZT was formed from the pyrolyzed amorphous precursor. At higher temperatures (400–425 °C/1h), thermodynamically stable PZT crystallites were first observed at the interface; with increasing higher temperatures, these nuclei grew across the interface and through the film toward the surface by consuming the metastable nanocrystalline fluorite grains. PZT thin films annealed above ∼500 °C/1h were observed to be dense with an epitaxial orientation relationship of [100](001)PZT‖[100](001)LAO. The metastable nanocrystalline fluorite to the stable single-crystal perovskite transformation gives an extra driving force by providing an additional decrease in free energy in addition to a driving force from the elimination of grain boundary area for epitaxy.

scholarly journals Nanostructure stabilization by low-temperature dopant pinning in multiferroic BiFeO3-based thin films produced by aqueous chemical solution deposition

2020 ◽  
Vol 8 (12) ◽  
pp. 4234-4245 ◽  
Author(s):  
Carlos Gumiel ◽  
Teresa Jardiel ◽  
David G. Calatayud ◽  
Thomas Vranken ◽  
Marlies K. Van Bael ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Chemical Solution Deposition ◽  
Single Phase ◽  
Aqueous Media ◽  
Processing Conditions ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Multiferroic Bifeo3

BiFeO3 single-phase thin films with an effective and tuneable multiferroic response are obtained in aqueous media by using mild processing conditions.

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