Low Temperature Measurement of the Electrical Conductivity in Amorphous InGaZnO Thin Films

2013 ◽  
Vol 3 (2) ◽  
pp. P10-P12 ◽  
Author(s):  
Hasung Sim ◽  
Seongil Choi ◽  
Je-Geun Park ◽  
Jaewon Song ◽  
Seungwu Han ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Temperature Measurement ◽  
Amorphous Ingazno

scholarly journals Electrical Conductivity of Co Thin Films at Low Temperature.

Shinku ◽  
2002 ◽  
Vol 45 (3) ◽  
pp. 235-238
Author(s):  
Taro YAKABE ◽  
Yoshikazu TERAI ◽  
Syuma YASUZUKA ◽  
Chieko TERAKURA ◽  
Taichi TERASHIMA ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Low Temperature

Low temperature electrical conductivity and seebeck coefficient of nanostructured CuSe thin films with Ga addition

Vacuum ◽  
2016 ◽  
Vol 129 ◽  
pp. 74-78 ◽  
Author(s):  
Anitha Abraham ◽  
Tarachand ◽  
Gunadhor S. Okram ◽  
Rajani Jacob ◽  
P.V. Sreenivasan ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Seebeck Coefficient

Enhanced thermoelectric properties of Al-doped ZnO thin films

2013 ◽  
Vol 1543 ◽  
Author(s):  
P. Mele ◽  
S. Saini ◽  
H. Abe ◽  
H. Honda ◽  
K. Matsumoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superior Performance ◽  
Zno Thin Films ◽  
Doped Zno

ABSTRACTWe have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 and Al2O3 substrates by Pulsed Laser Deposition (PLD) technique at various deposition temperatures (Tdep = 300 °C – 600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K - 600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, with electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to × 10-3 Wm-1K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Quantum corrections to low temperature electrical conductivity in Dy doped ZnO thin films

2015 ◽  
Vol 589 ◽  
pp. 521-525 ◽  
Author(s):  
R.S. Ajimsha ◽  
Amit.K. Das ◽  
M.P. Joshi ◽  
L.M. Kukreja
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Low Temperature ◽  
Quantum Corrections ◽  
Zno Thin Films ◽  
Doped Zno

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

Observation by HVEM of the martensite transformation and the superconducting transition in Nb3Sn

1988 ◽  
Vol 46 ◽  
pp. 788-789
Author(s):  
M. A. Kirk ◽  
M. C. Baker ◽  
B. J. Kestel ◽  
H. W. Weber
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Superconducting State ◽  
Martensite Transformation ◽  
Sputter Deposition ◽  
Diffusion Reaction ◽  
Solute Diffusion ◽  
Superconducting Transition ◽  
Twin Boundaries ◽  
Martensite Structure

It is well known that a number of compound superconductors with the A15 structure undergo a martensite transformation when cooled to the superconducting state. Nb3Sn is one of those compounds that transforms, at least partially, from a cubic to tetragonal structure near 43 K. To our knowledge this transformation in Nb3Sn has not been studied by TEM. In fact, the only low temperature TEM study of an A15 material, V3Si, was performed by Goringe and Valdre over 20 years ago. They found the martensite structure in some foil areas at temperatures between 11 and 29 K, accompanied by faults that consisted of coherent twin boundaries on {110} planes. In pursuing our studies of irradiation defects in superconductors, we are the first to observe by TEM a similar martensite structure in Nb3Sn.Samples of Nb3Sn suitable for TEM studies have been produced by both a liquid solute diffusion reaction and by sputter deposition of thin films.

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