Structural Investigations of AMS-n Mesoporous Materials by Transmission Electron Microscopy

2004 ◽  
Vol 16 (5) ◽  
pp. 813-821 ◽  
Author(s):  
Alfonso E. Garcia-Bennett ◽  
Osamu Terasaki ◽  
Shunai Che ◽  
Takashi Tatsumi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Mesoporous Materials ◽  
Structural Investigations ◽  
Transmission Electron

Characterization of Chiral Mesoporous Materials by Transmission Electron Microscopy

Small ◽  
2005 ◽  
Vol 1 (2) ◽  
pp. 233-237 ◽  
Author(s):  
Tetsu Ohsuna ◽  
Zheng Liu ◽  
Shunai Che ◽  
Osamu Terasaki
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Mesoporous Materials ◽  
Transmission Electron

Structural Investigations of (GaIn)(NAs)/GaAs Multi-Quantum-Wells by Transmission Electron Microscopy

2000 ◽  
Vol 618 ◽  
Author(s):  
K. Volz ◽  
A. Hasse ◽  
A.K. Schaper ◽  
T.E. Weiric ◽  
F. Höhnsdorf ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Separation ◽  
Quantum Wells ◽  
Interface Roughness ◽  
Structural Perfection ◽  
Structural Investigations ◽  
Transmission Electron ◽  
High Structural Perfection ◽  
Metastable Material

ABSTRACTThe structure of compressively strained (GaIn)(NAs)/GaAs multi-quantum wells (MQWs) grown by MOVPE is investigated using TEM. The quaternary, metastable material exhibits a high structural perfection if a N concentration of 4% is not exceeded. Phase separation or clustering effects are not observed, and the In is dispersed homogeneously throughout the quantum wells. The interface roughness of the quantum wells to the GaAs barriers is in the order of several monolayers. Increasing the N content to above 4.5% results in a deterioration of the structure and of the homogeneity of the wells

Sign in / Sign up

Export Citation Format

Share Document