Enhanced Thermal Destruction of Anthracene Vapor upon Laser Irradiation at 248 nm in the 150−800 °C Range

1996 ◽  
Vol 30 (5) ◽  
pp. 1789-1793 ◽  
Author(s):  
Andreas Thöny ◽  
Hubert van den Bergh ◽  
Michel J. Rossi

1999 ◽  
Vol 71 (4) ◽  
pp. 359-370 ◽  
Author(s):  
Zheng Ji ◽  
Keshun Deng ◽  
A.W. Davies ◽  
F.W. Williams


Author(s):  
Burton B. Silver ◽  
Theodore Lawwill

Dutch-belted 1 to 2.5 kg anesthetized rabbits were exposed to either xenon or argon laser light administered in a broad band, designed to cover large areas of the retina. For laser exposure, the pupil was dilated with atropine sulfate 1% and pheny lephrine 10%. All of the laser generated power was within a band centered at 5145.0 Anstroms. Established threshold for 4 hour exposures to laser irradiation are in the order of 25-35 microwatts/cm2. Animals examined for ultrastructural changes received 4 hour threshold doses. These animals exhibited ERG, opthalmascopic, and histological changes consistent with threshold damage.One month following exposure the rabbits were killed with pentobarbitol. The eyes were immediately enucleated and dissected while bathed in 3% phosphate buffered gluteraldehyde.



Author(s):  
S. Cao ◽  
A. J. Pedraza ◽  
L. F. Allard

Excimer-laser irradiation strongly modifies the near-surface region of aluminum nitride (AIN) substrates. The surface acquires a distinctive metallic appearance and the electrical resistivity of the near-surface region drastically decreases after laser irradiation. These results indicate that Al forms at the surface as a result of the decomposition of the Al (which has been confirmed by XPS). A computer model that incorporates two opposing phenomena, decomposition of the AIN that leaves a metallic Al film on the surface, and thermal evaporation of the Al, demonstrated that saturation of film thickness and, hence, of electrical resistance is reached when the rate of Al evaporation equals the rate of AIN decomposition. In an electroless copper bath, Cu is only deposited in laser-irradiated areas. This laser effect has been designated laser activation for electroless deposition. Laser activation eliminates the need of seeding for nucleating the initial layer of electroless Cu. Thus, AIN metallization can be achieved by laser patterning followed by electroless deposition.



2009 ◽  
Vol 00 (00) ◽  
pp. 090915102728058-8
Author(s):  
Yoshiteru Kato ◽  
Yasuhiko Nakashima ◽  
Naoki Shino ◽  
Koichi Sasaki ◽  
Akihiro Hosokawa ◽  
...  


1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev


1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti


1983 ◽  
Vol 44 (C5) ◽  
pp. C5-23-C5-36 ◽  
Author(s):  
H. Kurz ◽  
L. A. Lompré ◽  
J. M. Liu




2005 ◽  
Vol 125 (3) ◽  
pp. 235-240
Author(s):  
Terukazu Matsugi ◽  
Katsunori Arase ◽  
Hideki Motomura ◽  
Masafumi Jinno ◽  
Masaharu Aono
Keyword(s):  


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