Electronic Structure of the 16 Valence Electron Fragments M(CO)3(PR3)2 (M = Mo, W; R = iPr, Cy) in Their Complexes with H2, THF, and Three .pi.-Conjugated Dinucleating Ligands: Electrochemistry and Spectroscopy of Different Oxidation States

1995 ◽  
Vol 34 (3) ◽  
pp. 663-672 ◽  
Author(s):  
Wolfgang Bruns ◽  
Wolfgang Kaim ◽  
Eberhard Waldhoer ◽  
Michael Krejcik
Keyword(s):  
Electronic Structure ◽  
Valence Electron ◽  
Oxidation States ◽  
Pi Conjugated ◽  
Dinucleating Ligands

scholarly journals Spotlight on Alkali Metals: The Structural Chemistry of Alkali Metal Thallides

Crystals ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1013
Author(s):  
Stefanie Gärtner
Keyword(s):  
Crystal Structure ◽  
Alkali Metal ◽  
Crystal Structures ◽  
Alkali Metals ◽  
Valence Electron ◽  
Oxidation States ◽  
Valence Electron Concentration ◽  
Base Metals ◽  
Charge Balancing

Alkali metal thallides go back to the investigative works of Eduard Zintl about base metals in negative oxidation states. In 1932, he described the crystal structure of NaTl as the first representative for this class of compounds. Since then, a bunch of versatile crystal structures has been reported for thallium as electronegative element in intermetallic solid state compounds. For combinations of thallium with alkali metals as electropositive counterparts, a broad range of different unique structure types has been observed. Interestingly, various thallium substructures at the same or very similar valence electron concentration (VEC) are obtained. This in return emphasizes that the role of the alkali metals on structure formation goes far beyond ancillary filling atoms, which are present only due to charge balancing reasons. In this review, the alkali metals are in focus and the local surroundings of the latter are discussed in terms of their crystallographic sites in the corresponding crystal structures.

The effect of ionic lattices on the electronic structures of polyatomic ions. I. The triiodide ion

1966 ◽  
Vol 19 (9) ◽  
pp. 1567 ◽  
Author(s):  
RD Brown ◽  
EK Nunn
Keyword(s):  
Electronic Structure ◽  
Molecular Orbital ◽  
Electron Energy ◽  
Electronic Structures ◽  
Valence Electron ◽  
Bond Orders ◽  
Bond Lengths ◽  
Molecular Orbital Study ◽  
Crystalline Environment ◽  
Asymmetric Stretch

A VESCF molecular-orbital study of the electronic structure of the triiodide anion in its crystalline environment in caesium triiodide and in tetraphenylarsonium triiodide reveals the effect of the lattices upon the electronic structures. The calculated total valence-electron energy as a function of the position of the central iodine nucleus provides an understanding of the observed geometries of the anion in the two crystals. The energy plot also implies that the asymmetric stretch of the triiodide is strongly anharmonic in the crystal. A satisfactory correlation exists between observed iodine : iodine bond lengths and computed bond orders.

scholarly journals Realization of N-Type Semiconducting of Phosphorene through Surface Metal Doping and Work Function Study

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Haocheng Sun ◽  
Yuan Shang ◽  
Yanmei Yang ◽  
Meng Guo
Keyword(s):  
Electronic Structure ◽  
Work Function ◽  
Valence Electron ◽  
Electron Configuration ◽  
Impurity States ◽  
Cu Doping ◽  
Na Doping ◽  
Surface Metal ◽  
Structure Engineering ◽  
Surface Metal Atom

Phosphorene becomes an important member of the layered nanomaterials since its discovery for the fabrication of nanodevices. In the experiments, pristine phosphorene shows p-type semiconducting with no exception. To reach its full capability, n-type semiconducting is a necessity. Here, we report the electronic structure engineering of phosphorene by surface metal atom doping. Five metal elements, Cu, Ag, Au, Li, and Na, have been considered which could form stable adsorption on phosphorene. These elements show patterns in their electron configuration with one valence electron in their outermost s-orbital. Among three group 11 elements, Cu can induce n-type degenerate semiconducting, while Ag and Au can only introduce localized impurity states. The distinct ability of Cu, compared to Ag and Au, is mainly attributed to the electronegativity. Cu has smaller electronegativity and thus denotes its electron to phosphorene, upshifting the Fermi level towards conduction band, resulting in n-type semiconducting. Ag and Au have larger electronegativity and hardly transfer electrons to phosphorene. Parallel studies of Li and Na doping support these findings. In addition, Cu doping effectively regulates the work function of phosphorene, which gradually decreases upon increasing Cu concentration. It is also interesting that Au can hardly change the work function of phosphorene.

Electronic Structure of Ru2 Si3

1991 ◽  
Vol 234 ◽  
Author(s):  
P. Pecheur ◽  
G. Toussaint
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Metal Atom ◽  
Electron Concentration ◽  
Valence Electron ◽  
Tight Binding ◽  
Transition Metal Atom ◽  
Valence Electron Concentration ◽  
Tight Binding Method ◽  
The Stability

ABSTRACTThe electronic structure of Ru2Si3 has been calculated with the empirical tight binding method and the recursion procedure. The calculation strongly indicates that there exists a gap in the structure, which makes Ru2Si3 semiconducting, as found experimentally and explains the stability of the chimney-ladder phases for a valence electron concentration per transition metal atom smaller than 14.

Electronic Structure Calculations Using A Modified Thomas-Fermi Approximation

2011 ◽  
Vol 1370 ◽  
Author(s):  
Gregory C. Dente ◽  
Michael Tilton
Keyword(s):  
Electronic Structure ◽  
Energy Density ◽  
Kinetic Energy ◽  
Valence Electron ◽  
Closed Shell ◽  
Electronic Structure Calculations ◽  
Kinetic Energy Density ◽  
Group Iii ◽  
Thomas Fermi ◽  
Structure Calculations

ABSTRACTWe have recently developed an accurate and easily implemented approach to many-electron calculations, based on a modified Thomas-Fermi approximation. Specifically, we derived an electron density approximation, the first term of which is the Thomas-Fermi result, while the remaining terms substantially corrected the density near the nucleus. In a first application, we used the new density to accurately calculate the details of the self-consistent ion cores, as well as the ionization potentials for the outer s-orbital bound to the closed-shell ion core of the Group III, IV and V elements. Next, we demonstrated that the new density expression allows us to separate closed-shell core electron densities from valence electron densities. When we calculated the valence kinetic energy density, we showed that it separated into two terms: the first exactly cancelled the potential energy due to the ion core in the core region; the second was the residual kinetic energy density resulting from the envelopes of the valence electron orbitals. These features allowed us to write a functional for the total valence energy dependant only on the valence density. This equation provided the starting point for a large number of electronic structure calculations. Here, we used it to calculate the band structures of several Group IV and Group III-V semiconductors. We emphasize that this report only provides a summary; detailed derivations of all results are in Reference 5.

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