Oxidation-reduction chemistry of hydrogen peroxide in aprotic and aqueous solutions

1979 ◽  
Vol 18 (7) ◽  
pp. 1971-1973 ◽  
Author(s):  
Mark M. Morrison ◽  
Julian L Roberts ◽  
Donald T. Sawyer

1979 ◽  
Vol 10 (41) ◽  
Author(s):  
M. M. MORRISON ◽  
J. L. JUN. ROBERTS ◽  
D. T. SAWYER


1970 ◽  
Vol 48 (18) ◽  
pp. 2948-2948
Author(s):  
C. E. Burchill ◽  
I. S. Ginns

not available



1955 ◽  
Vol 3 (4) ◽  
pp. 379 ◽  
Author(s):  
W. V. Mayneord ◽  
W. Anderson ◽  
H. D. Evans ◽  
D. Rosen


2010 ◽  
Vol 184 (1-3) ◽  
pp. 308-312 ◽  
Author(s):  
Dongkyu Choi ◽  
O-Mi Lee ◽  
Seungho Yu ◽  
Seung-Woo Jeong






2012 ◽  
Vol 217-219 ◽  
pp. 1141-1145 ◽  
Author(s):  
Wei Wang ◽  
Li Juan Zhao ◽  
Ping Xin Song ◽  
Ying Jiu Zhang

Assisted by Ag nanoparticles, Si substrates were etched in aqueous solutions containing hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with different volumes of etching solution. The etching morphology of Si wafers was found to be affected by the volumes. In etching solutions with smaller volume, the pores were created; in etching solutions with larger volume, the nanostructure composed of nanowires and nanopores (pores+wires nanostructure) were generated. In addition, the lengths of these Si nanostructures increased with the increase of the etching volume. Possible formation mechanism for this phenomenon was discussed.



2018 ◽  
Vol 38 (s1) ◽  
pp. S205-S213 ◽  
Author(s):  
Reza Shokoohi ◽  
Zahra Torkshavand ◽  
Mohammad Molla Mahmoudi ◽  
Abbas Moradi Behgoo ◽  
Effat Ghaedrahmati ◽  
...  


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