Error in the Average Coefficients of Specific Volume Change from 0 to 20° in Aqueous Solutions of Hydrogen Peroxide

1950 ◽  
Vol 72 (11) ◽  
pp. 5324-5325 ◽  
Author(s):  
Frederick G. Keyes ◽  
Charles E. Huckaba
Keyword(s):  
Hydrogen Peroxide ◽  
Aqueous Solutions ◽  
Volume Change ◽  
Specific Volume

scholarly journals Specific Volume of Cellulose in Aqueous Solutions of Inorganic Salts

Nature ◽  
1953 ◽  
Vol 171 (4358) ◽  
pp. 842-842
Author(s):  
S. M. NEALE ◽  
G. R. WILLIAMSON
Keyword(s):  
Aqueous Solutions ◽  
Specific Volume ◽  
Inorganic Salts

Radiation-induced oxidation of 2-propanol by hydrogen peroxide in aqueous solutions

1970 ◽  
Vol 48 (18) ◽  
pp. 2948-2948
Author(s):  
C. E. Burchill ◽  
I. S. Ginns
Keyword(s):  
Hydrogen Peroxide ◽  
Aqueous Solutions ◽  
Radiation Induced

not available

Oxidation-reduction chemistry of hydrogen peroxide in aprotic and aqueous solutions

1979 ◽  
Vol 18 (7) ◽  
pp. 1971-1973 ◽  
Author(s):  
Mark M. Morrison ◽  
Julian L Roberts ◽  
Donald T. Sawyer
Keyword(s):  
Hydrogen Peroxide ◽  
Aqueous Solutions ◽  
Oxidation Reduction

Hydrogen Peroxide Yields in X-Irradiated Aqueous Solutions A Sensitive Method Based on Hydrazide Chemiluminescence

1955 ◽  
Vol 3 (4) ◽  
pp. 379 ◽  
Author(s):  
W. V. Mayneord ◽  
W. Anderson ◽  
H. D. Evans ◽  
D. Rosen
Keyword(s):  
Hydrogen Peroxide ◽  
Aqueous Solutions ◽  
Sensitive Method

Gamma radiolysis of alachlor aqueous solutions in the presence of hydrogen peroxide

2010 ◽  
Vol 184 (1-3) ◽  
pp. 308-312 ◽  
Author(s):  
Dongkyu Choi ◽  
O-Mi Lee ◽  
Seungho Yu ◽  
Seung-Woo Jeong
Keyword(s):  
Hydrogen Peroxide ◽  
Aqueous Solutions ◽  
Gamma Radiolysis

Etching Volume Effect on the Morphology of Silicon Etched by Metal-Assisted Chemical Method

2012 ◽  
Vol 217-219 ◽  
pp. 1141-1145 ◽  
Author(s):  
Wei Wang ◽  
Li Juan Zhao ◽  
Ping Xin Song ◽  
Ying Jiu Zhang
Keyword(s):  
Hydrogen Peroxide ◽  
Aqueous Solutions ◽  
Formation Mechanism ◽  
Ag Nanoparticles ◽  
Hydrofluoric Acid ◽  
Chemical Method ◽  
Volume Effect ◽  
Etching Solution ◽  
Si Substrates ◽  
Si Nanostructures

Assisted by Ag nanoparticles, Si substrates were etched in aqueous solutions containing hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with different volumes of etching solution. The etching morphology of Si wafers was found to be affected by the volumes. In etching solutions with smaller volume, the pores were created; in etching solutions with larger volume, the nanostructure composed of nanowires and nanopores (pores+wires nanostructure) were generated. In addition, the lengths of these Si nanostructures increased with the increase of the etching volume. Possible formation mechanism for this phenomenon was discussed.

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