Insertion of Benzonitrile into Al–N and Ga–N Bonds: Formation of Fused Carbatriaza-Gallanes/Alanes and Their Subsequent Synthesis from Amidines and Trimethyl-Gallium/Aluminum

2015 ◽  
Vol 54 (4) ◽  
pp. 2000-2008 ◽  
Author(s):  
K. Maheswari ◽  
A. Ramakrishna Rao ◽  
N. Dastagiri Reddy
Keyword(s):  
Trimethyl Gallium

scholarly journals Chlorination Products of Trimethyl Gallium

1933 ◽  
Vol 19 (3) ◽  
pp. 298-303 ◽  
Author(s):  
C. A. Kraus ◽  
F. E. Toonder
Keyword(s):  
Trimethyl Gallium

EFFECTS OF OPERATING CONDITIONS ON THE DEPOSITION OF GaAs IN A VERTICAL CVD REACTOR

2008 ◽  
Vol 15 (01n02) ◽  
pp. 111-116 ◽  
Author(s):  
JAE-SANG BAEK ◽  
JIN-HYO BOO ◽  
YOUN-JEA KIM
Keyword(s):  
Fluid Transport ◽  
Numerical Study ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Rotation Velocity ◽  
Operating Conditions ◽  
Deposition Condition ◽  
Three Dimensional Model ◽  
Trimethyl Gallium ◽  
Vertical Cvd Reactor

A numerical study is needed to gain insight into the growth mechanism and improve the reactor design or optimize the deposition condition in chemical vapor deposition (CVD). In this study, we have performed a numerical analysis of the deposition of gallium arsenide ( GaAs ) from trimethyl gallium (TMG) and arsine in a vertical CVD reactor. The effects of operating parameters, such as the rotation velocity of susceptor, inlet velocity, and inlet TMG fraction, are investigated and presented. The three-dimensional model which is used in this investigation includes complete coupling between the thermal-fluid transport and species transport with chemical reaction.

Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium Source

1998 ◽  
Vol 537 ◽  
Author(s):  
Ling Zhang ◽  
Rong Zhang ◽  
Marek P. Boleslawski ◽  
T.F. Kuech
Keyword(s):  
Growth Conditions ◽  
Rocking Curve ◽  
X Ray ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Curve Line ◽  
Metal Organic ◽  
Increasing Temperature ◽  
Trimethyl Gallium

AbstractMetal organic vapor phase epitaxy (MOVPE) of GaN has been carried out using diethyl gallium chloride (DEGaCI) and ammonia. The growth rate and efficiency of the DEGaCl-based growth decreases with increasing temperature when compared to trimethyl gallium (TMG)-based growth under similar conditions. Both low temperature buffer and the high temperature GaN layers were grown using the DEGaCI-NH3 precursor combination on the basal plane of sapphire and compared to similar structures grown using TMG and NH3. DEGaCl-based growth reveals an improved growth behavior under identical growth conditions to the conventional TMGa and ammonia growth. X-ray, Hall, and atomic force microscopy (AFM) measurements have been carried out on these samples providing a direct comparison of materials properties associated with these growth precursors. For the DEGaCl-based growth, the x-ray rocking curve line width, using the (0002) reflection, is as low as 300 arcsec on a 2.5-micron thick film. A RMS surface roughness of ∼0.5nm measured over a 10x10 micron area.

Vibrational spectra of trimethyl gallium species in relation to the force field and methyl group internal rotation

1987 ◽  
Vol 43 (11) ◽  
pp. 1405-1411 ◽  
Author(s):  
D.C. McKean ◽  
G.P. McQuillan ◽  
J.L. Duncan ◽  
N. Shephard ◽  
B. Munro ◽  
...  
Keyword(s):  
Force Field ◽  
Internal Rotation ◽  
Vibrational Spectra ◽  
Methyl Group ◽  
Trimethyl Gallium

A Comparison of the Growth of GaAs and GaP from Trimethyl-Gallium

1995 ◽  
Vol 34 (Part 1, No. 2A) ◽  
pp. 434-441 ◽  
Author(s):  
Markus Weyers ◽  
Michio Sato
Keyword(s):  
Trimethyl Gallium

scholarly journals HREM at orthogonal projections of GaAs islands on silicon

1989 ◽  
Vol 47 ◽  
pp. 586-587
Author(s):  
F. A. Ponce ◽  
C. J. D. Hetherington
Keyword(s):  
Three Dimensional ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Orthogonal Projections ◽  
Nominal Thickness ◽  
Gaas Films ◽  
Metal Organic ◽  
Trimethyl Gallium

HREM studies typically examine only one projection of a structure and information in the electron beam direction is lost. In most cases, the structure in this direction is uniform and already known, but in others a second projection needs to be observed. This could involve preparing a second specimen sectioned at right angles to the first, or as described here, tilting a specimen through ±45° and observing the same volume in orthogonal projections. The specimen used here was of GaAs islands on <001> silicon, examined in the Atomic Resolution Microscope at LBL.In the effort to grow defect-free GaAs films on silicon substrates, understanding of the early stages of growth is required. For this experiment we chose a specimen of ultra-thin GaAs grown on silicon substrate by metal-organic chemical vapor deposition (MOCVD). The GaAs was grown at 550°C for a nominal thickness of20nm from trimethyl gallium and arsine sources.The growth conditions lead to three-dimensional growth of islands bound by {111}A planes, terminated on Ga layers.

scholarly journals Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium Source

1999 ◽  
Vol 4 (S1) ◽  
pp. 351-356
Author(s):  
Ling Zhang ◽  
Rong Zhang ◽  
Marek P. Boleslawski ◽  
T.F. Kuech
Keyword(s):  
Growth Conditions ◽  
Rocking Curve ◽  
X Ray ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Curve Line ◽  
Metal Organic ◽  
Increasing Temperature ◽  
Trimethyl Gallium

Metal organic vapor phase epitaxy (MOVPE) of GaN has been carried out using diethyl gallium chloride (DEGaCl) and ammonia. The growth rate and efficiency of the DEGaCl-based growth decreases with increasing temperature when compared to trimethyl gallium (TMG)-based growth under similar conditions. Both low temperature buffer and the high temperature GaN layers were grown using the DEGaCl-NH3 precursor combination on the basal plane of sapphire and compared to similar structures grown using TMG and NH3. DEGaCl-based growth reveals an improved growth behavior under identical growth conditions to the conventional TMGa and ammonia growth. X-ray, Hall, and atomic force microscopy (AFM) measurements have been carried out on these samples providing a direct comparison of materials properties associated with these growth precursors. For the DEGaCl-based growth, the x-ray rocking curve line width, using the (0002) reflection, is as low as 300 arcsec on a 2.5-micron thick film. A RMS surface roughness of ∼0.5nm measured over a 10×10 micron area.

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